AP2617GY MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2617GY
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 170 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
Encapsulados: SOT26
Búsqueda de reemplazo de AP2617GY MOSFET
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AP2617GY datasheet
ap2617gy.pdf
AP2617GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 1.8V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 38m D Surface Mount Device ID -6A G D RoHS Compliant & Halogen-Free SOT-26 D D Description AP2617 series are from Advanced Power innovated design and silicon process technology to ach
ap2611gyt-hf.pdf
AP2611GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID -15.4A G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device d
ap2612gy-hf.pdf
AP2612GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 1.8V Gate Drive BVDSS 30V D D Simple Drive Requirement RDS(ON) 35m Surface Mount Device ID 6A G D RoHS Compliant D SOT-26 Description Advanced Power MOSFETs utilized advanced processing techniques D to achieve the lowest possible on-resistanc
ap2611gy-hf.pdf
AP2611GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Small Package Outline RDS(ON) 500m Surface Mount Device ID - 1.4A G RoHS Compliant & Halogen-Free S S D Description D AP2611 series are from Advanced Power innovated design and silicon G process technology to achieve t
Otros transistores... AP2318GEN , AP2320GN , AP6N2K0EN , AP2308GEN , AP2318BEN , AP15TP1R0Y , AP2604GY , AP2615GEY , TK10A60D , AP2N030EY , AP2P052Y , AP3N028EY , AP6N090Y , AP2906EY , AP2626GY , AP2530GY , AP2530AGY .
History: AP8N010LM | AP03N70H
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