AP3N028EY Todos los transistores

 

AP3N028EY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3N028EY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SOT26
 

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AP3N028EY Datasheet (PDF)

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 ap3n028ey.pdf pdf_icon

AP3N028EY

AP3N028EYHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS 30VD Lower Gate Charge D RDS(ON) 28m Fast Switching Performance ID 7AGD RoHS Compliant & Halogen-FreeDSOT-26DDescriptionAP3N028E series are from Advanced Power innovated design and siliconGprocess technology to ach

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 ap3n028en.pdf pdf_icon

AP3N028EY

AP3N028ENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Lower Gate Charge RDS(ON) 28m Fast Switching Performance ID 5.4AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3N028E series are from Advanced Power innovated design and siliconGprocess technology to achieve

 8.1. Size:202K  ape
 ap3n020p.pdf pdf_icon

AP3N028EY

AP3N020PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 23.3AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 seriesare fromAdvanced Power innovated designAP3N020series arefrom Advanced Power innovated de

 9.1. Size:151K  ape
 ap3n035n.pdf pdf_icon

AP3N028EY

AP3N035NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30VD Lower Gate Charge RDS(ON) 35m Fast Switching Performance ID 4.5AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3N035 series are from Advanced Power innovated design and siliconprocess technology to achieve the

MOSTRAR MÁS

Otros transistores... AP2308GEN , AP2318BEN , AP15TP1R0Y , AP2604GY , AP2615GEY , AP2617GY , AP2N030EY , AP2P052Y , 10N65 , AP6N090Y , AP2906EY , AP2626GY , AP2530GY , AP2530AGY , AP4C205Y , AP2535GEY , AP2622GY .

History: AON7788 | BUK9Y4R4-40E | MMIX1F360N15T2 | NCE50NF600I | 2N7000RLRPG | 2N6917 | 2SK715V-AC

 

 
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