AP2535GEY Todos los transistores

 

AP2535GEY MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2535GEY

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.13 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 4.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: SOT26

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AP2535GEY datasheet

 ..1. Size:226K  ape
ap2535gey.pdf pdf_icon

AP2535GEY

AP2535GEY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Capable of 1.8V Gate Drive N-CH BVDSS 20V S1 Lower Gate Charge RDS(ON) 32m D1 Fast Switching Performance ID 4.6A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20V G1 SOT-26 RDS(ON) 80m Description ID -3.1A AP2535 series are from Advanced Powe

 0.1. Size:122K  ape
ap2535gey-hf.pdf pdf_icon

AP2535GEY

AP2535GEY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Capable of 1.8V Gate Drive N-CH BVDSS 20V S1 Lower Gate Charge RDS(ON) 32m D1 Fast Switching Performance ID 4.6A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20V G1 SOT-26 RDS(ON) 80m Description ID -3.1A AP2535 series are from Advanced Powe

 9.1. Size:189K  ape
ap2530gy.pdf pdf_icon

AP2535GEY

AP2530GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Low Gate Charge N-CH BVDSS 30V S1 Low On-resistance RDS(ON) 72m D1 Surface Mount Package ID 3.3A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30V SOT-26 G1 RDS(ON) 150m Description ID -2.3A AP2530 series are from Advanced Power innovated desig

 9.2. Size:120K  ape
ap2531gy.pdf pdf_icon

AP2535GEY

AP2531GY RoHS-compliant Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Low Gate Charge Drive N-CH BVDSS 16V S1 Low On-resistance RDS(ON) 58m D1 Surface Mount Package ID 3.5A G2 S2 P-CH BVDSS -16V SOT-26 G1 RDS(ON) 125m Description ID -2.5A Advanced Power MOSFETs utilized advanced processing techniques to achieve the low

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