AP2535GEY MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2535GEY
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.13 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 4.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 70 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
Encapsulados: SOT26
Búsqueda de reemplazo de AP2535GEY MOSFET
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AP2535GEY datasheet
ap2535gey.pdf
AP2535GEY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Capable of 1.8V Gate Drive N-CH BVDSS 20V S1 Lower Gate Charge RDS(ON) 32m D1 Fast Switching Performance ID 4.6A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20V G1 SOT-26 RDS(ON) 80m Description ID -3.1A AP2535 series are from Advanced Powe
ap2535gey-hf.pdf
AP2535GEY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Capable of 1.8V Gate Drive N-CH BVDSS 20V S1 Lower Gate Charge RDS(ON) 32m D1 Fast Switching Performance ID 4.6A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20V G1 SOT-26 RDS(ON) 80m Description ID -3.1A AP2535 series are from Advanced Powe
ap2530gy.pdf
AP2530GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Low Gate Charge N-CH BVDSS 30V S1 Low On-resistance RDS(ON) 72m D1 Surface Mount Package ID 3.3A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30V SOT-26 G1 RDS(ON) 150m Description ID -2.3A AP2530 series are from Advanced Power innovated desig
ap2531gy.pdf
AP2531GY RoHS-compliant Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Low Gate Charge Drive N-CH BVDSS 16V S1 Low On-resistance RDS(ON) 58m D1 Surface Mount Package ID 3.5A G2 S2 P-CH BVDSS -16V SOT-26 G1 RDS(ON) 125m Description ID -2.5A Advanced Power MOSFETs utilized advanced processing techniques to achieve the low
Otros transistores... AP2P052Y , AP3N028EY , AP6N090Y , AP2906EY , AP2626GY , AP2530GY , AP2530AGY , AP4C205Y , SI2302 , AP2622GY , AP6800EY , AP1332GEU , AP2N7002KU , AP1430GEU6 , AP2N1K2EN1 , AP5N2K2EN1 , AP2N050G .
History: AP9474GM-HF | AP3P080N | AP9870GH
History: AP9474GM-HF | AP3P080N | AP9870GH
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