AP2535GEY - параметры транзистора MOSFET, его аналоги, datasheet

AP2535GEY MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: AP2535GEY
   Маркировка: YUSS
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 1.13 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9 nC
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
   Тип корпуса: SOT26

Аналог (замена) для AP2535GEY

AP2535GEY Datasheet (PDF)

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ap2535gey.pdf

AP2535GEY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Capable of 1.8V Gate Drive N-CH BVDSS 20VS1 Lower Gate Charge RDS(ON) 32mD1 Fast Switching Performance ID 4.6AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20VG1SOT-26RDS(ON) 80mDescription ID -3.1AAP2535 series are from Advanced Powe

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ap2535gey-hf.pdf

9.1. Size:189K ape
ap2530gy.pdf

AP2530GY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 30VS1 Low On-resistance RDS(ON) 72mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VSOT-26 G1RDS(ON) 150mDescription ID -2.3AAP2530 series are from Advanced Power innovated desig

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ap2531gy.pdf

AP2531GYRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge Drive N-CH BVDSS 16VS1 Low On-resistance RDS(ON) 58mD1 Surface Mount Package ID 3.5AG2S2P-CH BVDSS -16VSOT-26 G1RDS(ON) 125mDescription ID -2.5AAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the low

9.3. Size:120K ape
ap2531gy-hf.pdf

AP2531GY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge Drive N-CH BVDSS 16VS1 Low On-resistance RDS(ON) 58mD1 Surface Mount Package ID 3.5AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -16VSOT-26 G1RDS(ON) 125mDescription ID -2.5AAdvanced Power MOSFETs utilized advanced proces

9.4. Size:119K ape
ap2533gy-hf.pdf

AP2533GY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 16VS1 Fast Switching Performance RDS(ON) 150mD1 Surface Mount Package ID 2.2AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -16VSOT-26 G1RDS(ON) 320mDescription ID -1.5AAdvanced Power MOSFETs utilized advanced

9.5. Size:117K ape
ap2532gy.pdf

AP2532GYRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 30VS1 Fast Switching Performance RDS(ON) 130mD1 Surface Mount Package ID 2.4AG2S2P-CH BVDSS -30VSOT-26 G1RDS(ON) 250mDescription ID -1.8AAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the

9.6. Size:121K ape
ap2530agy-hf.pdf

AP2530AGY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 30VS1 Fast Switching Performance RDS(ON) 72mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VSOT-26 G1RDS(ON) 150mDescription ID -2.3AAdvanced Power MOSFETs utilized advanced pr

9.7. Size:225K ape
ap2530agy.pdf