AP6N090G Todos los transistores

 

AP6N090G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6N090G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: SOT89

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AP6N090G datasheet

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AP6N090G

AP6N090G Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7A S RoHS Compliant & Halogen-Free D SOT-89 G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve the

 7.1. Size:178K  ape
 ap6n090k.pdf pdf_icon

AP6N090G

AP6N090K Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Lower Gate Charge RDS(ON) 90m S Fast Switching Characteristic ID3 4.1A D RoHS Compliant & Halogen-Free SOT-223 G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve

 7.2. Size:210K  ape
 ap6n090y.pdf pdf_icon

AP6N090G

AP6N090Y Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement S BVDSS 60V D Lower Gate Charge RDS(ON) 90m D Fast Switching Characteristic ID3 3.5A G D RoHS Compliant & Halogen-Free SOT-26 D Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achi

 7.3. Size:188K  ape
 ap6n090n.pdf pdf_icon

AP6N090G

AP6N090N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.5A S RoHS Compliant & Halogen-Free SOT-23S G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve the lowes

MOSTRAR MÁS

Otros transistores... AP2622GY , AP6800EY , AP1332GEU , AP2N7002KU , AP1430GEU6 , AP2N1K2EN1 , AP5N2K2EN1 , AP2N050G , 8N60 , AP9451GG , AP9452GG , AP9T16AGH , AP99T03GS , AP99T03GP , AP9992GR , AP9990GMT-L , AP9990GMT .

History: STF12N120K5 | FDBL9406F085 | CJE3134K

 

 

 

 

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