IRFF9024 Todos los transistores

 

IRFF9024 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFF9024
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100(max) nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: TO39

 Búsqueda de reemplazo de MOSFET IRFF9024

 

Principales características: IRFF9024

 ..1. Size:135K  international rectifier
irff9024.pdf pdf_icon

IRFF9024

PD -90413 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF9024 60V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9024 -60V 0.28 -6.4A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design

 9.1. Size:132K  international rectifier
irff9110.pdf pdf_icon

IRFF9024

PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF9110 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9110 -100V 1.2 -2.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desi

 9.2. Size:130K  international rectifier
irff9210.pdf pdf_icon

IRFF9024

PD - 90382 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF9210 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9210 -200V 3.0 -1.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desig

 9.3. Size:133K  international rectifier
2n6849 irff9130.pdf pdf_icon

IRFF9024

PD - 90550D IRFF9130 JANTX2N6849 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849 HEXFET TRANSISTORS JANS2N6849 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/564 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9130 -100V 0.30 -6.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry an

Otros transistores... IRFF210 , IRFF220 , IRFF230 , IRFF310 , IRFF320 , IRFF330 , IRFF420 , IRFF430 , IRFP260 , IRFF9110 , IRFF9120 , IRFF9130 , IRFF9210 , IRFF9220 , IRFF9230 , IRFI1010N , IRFI1310N .

History: PSMN3R9-100YSF | AP05FN50I | UTT60P03

 

 
Back to Top

 


 
.