IRFF9024 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFF9024
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100(max) nS
Cossⓘ - Capacitancia de salida: 360 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Paquete / Cubierta: TO39
Búsqueda de reemplazo de MOSFET IRFF9024
Principales características: IRFF9024
irff9024.pdf
PD -90413 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF9024 60V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9024 -60V 0.28 -6.4A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design
irff9110.pdf
PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF9110 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9110 -100V 1.2 -2.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desi
irff9210.pdf
PD - 90382 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF9210 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9210 -200V 3.0 -1.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desig
2n6849 irff9130.pdf
PD - 90550D IRFF9130 JANTX2N6849 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849 HEXFET TRANSISTORS JANS2N6849 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/564 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9130 -100V 0.30 -6.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry an
Otros transistores... IRFF210 , IRFF220 , IRFF230 , IRFF310 , IRFF320 , IRFF330 , IRFF420 , IRFF430 , IRFP260 , IRFF9110 , IRFF9120 , IRFF9130 , IRFF9210 , IRFF9220 , IRFF9230 , IRFI1010N , IRFI1310N .
History: PSMN3R9-100YSF | AP05FN50I | UTT60P03
History: PSMN3R9-100YSF | AP05FN50I | UTT60P03
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP30H150K | AP30H150G | AP3065SD | AP3004S | AP3003 | AP3002S | AP2N65K | AP2716SD | AP2716QD | AP2716KD | AP2714SD | AP2714QD | AP25P30Q | AP25P06Q | AP25P06K | AP25N06Q
Popular searches
k3502 datasheet | p0903bdg datasheet | 2sa722 | f1010e mosfet datasheet | 2sa566 | bc559 equivalent | c2075 transistor | ecg123

