AP9990GMT-L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9990GMT-L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 23.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: PMPAK5X6L

Búsqueda de reemplazo de MOSFET AP9990GMT-L

AP9990GMT-L Datasheet (PDF)

..1. Size:312K ape
ap9990gmt-l.pdf

AP9990GMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V 100% Rg & UIS Test RDS(ON) 5m Low On-resistance ID5 60AG RoHS Compliant & Halogen-FreeDSDDDDescriptionAP9990 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

4.1. Size:95K ape
ap9990gmt-hf.pdf

AP9990GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V SO-8 Compatible with Heatsink RDS(ON) 5m Low On-resistance ID 84AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

5.1. Size:151K ape
ap9990gmt.pdf

AP9990GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V SO-8 Compatible with Heatsink RDS(ON) 5m Low On-resistance ID 84AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP9990 series are from Advanced Power innovated design and Dsilicon process technology to achieve the

7.1. Size:55K ape
ap9990gi-hf.pdf

AP9990GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6m Fast Switching Characteristic ID 55AG RoHS Compliant & Halogen-FreeSDescriptionAP9990 series are from Advanced Power innovated designand silicon process technology to achieve the lowest po

7.2. Size:58K ape
ap9990gh-hf.pdf

AP9990GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6m Fast Switching Characteristic ID 100AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theThe Advanced Power MOSFETs from APEC provide theGdesigner wi

7.3. Size:103K ape
ap9990gif-hf.pdf

AP9990GIF-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6m Fast Switching Characteristic ID 55AG RoHS Compliant & Halogen-FreeTop ViewSDescriptionAdvanced Power MOSFETs from APEC provide the designerSchematic forwith the best combination of f

7.4. Size:107K ape
ap9990gp-hf.pdf

AP9990GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6m Fast Switching Characteristic ID 100AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theThe Advanced Power MOSFETs from APEC provide thedesigner with

7.5. Size:55K ape
ap9990gr-hf.pdf

AP9990GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6m Fast Switching Characteristic ID 100AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

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