AP9990GMT-L Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP9990GMT-L
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 23.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 450 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
Тип корпуса: PMPAK5X6L
Аналог (замена) для AP9990GMT-L
AP9990GMT-L Datasheet (PDF)
ap9990gmt-l.pdf

AP9990GMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V 100% Rg & UIS Test RDS(ON) 5m Low On-resistance ID5 60AG RoHS Compliant & Halogen-FreeDSDDDDescriptionAP9990 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
ap9990gmt-hf.pdf

AP9990GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V SO-8 Compatible with Heatsink RDS(ON) 5m Low On-resistance ID 84AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
ap9990gmt.pdf

AP9990GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V SO-8 Compatible with Heatsink RDS(ON) 5m Low On-resistance ID 84AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP9990 series are from Advanced Power innovated design and Dsilicon process technology to achieve the
ap9990gi-hf.pdf

AP9990GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6m Fast Switching Characteristic ID 55AG RoHS Compliant & Halogen-FreeSDescriptionAP9990 series are from Advanced Power innovated designand silicon process technology to achieve the lowest po
Другие MOSFET... AP2N050G , AP6N090G , AP9451GG , AP9452GG , AP9T16AGH , AP99T03GS , AP99T03GP , AP9992GR , MMIS60R580P , AP9990GMT , AP9979GH , AP9950AGP , AP9950AGH , AP9938GEY , AP9938GEO , AP9938AGEY , AP9926GEO .
History: AP9971AGS-HF | CS6N70FB9D | NTMFS4837NT1G | BSC054N04NSG | 2SK2892-01R | SVD501DEAG | 2SK3673-01MR
History: AP9971AGS-HF | CS6N70FB9D | NTMFS4837NT1G | BSC054N04NSG | 2SK2892-01R | SVD501DEAG | 2SK3673-01MR



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2sd313 datasheet | k8a50d datasheet | 2sc381 | datasheet mosfet | 2sk2586 | 13005 transistor | ecg123a | irfp360