AP9990GMT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9990GMT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 450 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: PMPAK5X6
Búsqueda de reemplazo de AP9990GMT MOSFET
AP9990GMT Datasheet (PDF)
ap9990gmt.pdf

AP9990GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V SO-8 Compatible with Heatsink RDS(ON) 5m Low On-resistance ID 84AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP9990 series are from Advanced Power innovated design and Dsilicon process technology to achieve the
ap9990gmt-hf.pdf

AP9990GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V SO-8 Compatible with Heatsink RDS(ON) 5m Low On-resistance ID 84AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
ap9990gmt-l.pdf

AP9990GMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V 100% Rg & UIS Test RDS(ON) 5m Low On-resistance ID5 60AG RoHS Compliant & Halogen-FreeDSDDDDescriptionAP9990 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
ap9990gi-hf.pdf

AP9990GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6m Fast Switching Characteristic ID 55AG RoHS Compliant & Halogen-FreeSDescriptionAP9990 series are from Advanced Power innovated designand silicon process technology to achieve the lowest po
Otros transistores... AP6N090G , AP9451GG , AP9452GG , AP9T16AGH , AP99T03GS , AP99T03GP , AP9992GR , AP9990GMT-L , RU7088R , AP9979GH , AP9950AGP , AP9950AGH , AP9938GEY , AP9938GEO , AP9938AGEY , AP9926GEO , AP9923GEO .
History: 2SK1099 | AOI950A70 | SQM120N04-1M8 | VBM165R02 | IRFS9623
History: 2SK1099 | AOI950A70 | SQM120N04-1M8 | VBM165R02 | IRFS9623



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
k8a50d datasheet | 2sc381 | datasheet mosfet | 2sk2586 | 13005 transistor | ecg123a | irfp360 | bc108 equivalent