AP9990GMT Todos los transistores

 

AP9990GMT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9990GMT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 450 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: PMPAK5X6

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AP9990GMT datasheet

 ..1. Size:151K  ape
ap9990gmt.pdf pdf_icon

AP9990GMT

AP9990GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V SO-8 Compatible with Heatsink RDS(ON) 5m Low On-resistance ID 84A G RoHS Compliant & Halogen-Free S D D Description D AP9990 series are from Advanced Power innovated design and D silicon process technology to achieve the

 0.1. Size:95K  ape
ap9990gmt-hf.pdf pdf_icon

AP9990GMT

AP9990GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V SO-8 Compatible with Heatsink RDS(ON) 5m Low On-resistance ID 84A G RoHS Compliant & Halogen-Free S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 0.2. Size:312K  ape
ap9990gmt-l.pdf pdf_icon

AP9990GMT

AP9990GMT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V 100% Rg & UIS Test RDS(ON) 5m Low On-resistance ID5 60A G RoHS Compliant & Halogen-Free D S D D D Description AP9990 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

 7.1. Size:55K  ape
ap9990gi-hf.pdf pdf_icon

AP9990GMT

AP9990GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6m Fast Switching Characteristic ID 55A G RoHS Compliant & Halogen-Free S Description AP9990 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

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History: AP90P03Q | AP80N04Q

 

 

 

 

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