AP9938AGEY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9938AGEY
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.38 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 7.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 130 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: 2928-8
Búsqueda de reemplazo de AP9938AGEY MOSFET
AP9938AGEY Datasheet (PDF)
ap9938agey.pdf

AP9938AGEY-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD1/D2 Low On-resistance RDS(ON) 16mG2 Surface Mount Package ID 7.5AS2 RoHS Compliant & Halogen-Free G1S12928-8DescriptionD1 D2AP9938A series are from Advanced Power innovated designG1 G2and silicon proce
ap9938agey-hf.pdf

AP9938AGEY-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD1/D2 Low On-resistance RDS(ON) 16mG2 Surface Mount Package ID 7.5AS2 RoHS Compliant & Halogen-Free G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized advanced processingG1 G2techniques to achieve
ap9938gem-hf.pdf

AP9938GEM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 20VD2D1 Low On-resistance RDS(ON) 18mD1 Fast Switching Performance ID 8.5AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP9938 series are from Advanced Power innovated design andD1 D2silicon pr
ap9938gey.pdf

AP9938GEY-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD1/D2 Lower on-resistance RDS(ON) 16mG2 Surface Mount Package ID 7.5AS2 RoHS Compliant & Halogen-Free G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized advanced processingG1 G2techniques to achiev
Otros transistores... AP9992GR , AP9990GMT-L , AP9990GMT , AP9979GH , AP9950AGP , AP9950AGH , AP9938GEY , AP9938GEO , HY1906P , AP9926GEO , AP9923GEO , AP9922GEO , AP97T07AGP , AP95T10AGP , AP95T07BGP , AP9579GJ , AP9467GH .
History: SH8M12 | VBA3316 | 2N65G-TMS4-T | 2SK2684L | SLP70R600S2 | 2SK3018 | STW18NM60ND
History: SH8M12 | VBA3316 | 2N65G-TMS4-T | 2SK2684L | SLP70R600S2 | 2SK3018 | STW18NM60ND



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