AP9923GEO MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9923GEO
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua
de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 55 nS
Cossⓘ - Capacitancia de salida: 635 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Encapsulados: TSSOP8
Búsqueda de reemplazo de AP9923GEO MOSFET
- Selecciónⓘ de transistores por parámetros
AP9923GEO datasheet
..1. Size:143K ape
ap9923geo.pdf 
AP9923GEO-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low On-Resistance BVDSS -12V S2 S2 D2 Small & Thin Package RDS(ON) 25m G1 Capable of 1.8V Gate Drive ID -7A S1 S1 TSSOP-8 D1 RoHS Compliant & Halogen-Free D1 D2 Description G1 G2 Advanced Power MOSFETs from APEC provide the designer with the best c
0.1. Size:96K ape
ap9923geo-hf.pdf
AP9923GEO-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low On-Resistance BVDSS -12V S2 S2 D2 Small & Thin Package RDS(ON) 25m G1 Capable of 1.8V Gate Drive ID -7A S1 S1 TSSOP-8 D1 RoHS Compliant & Halogen-Free D1 D2 Description G1 G2 Advanced Power MOSFETs from APEC provide the designer with the best c
9.1. Size:60K ape
ap9926gm-hf.pdf
AP9926GM-HF Halogen-Free Product Advanced Power Dual N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20V D2 D2 D1 Capable of 2.5V Gate Drive RDS(ON) 30m D1 Surface Mount Package ID 6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description D2 D1 AP9926 series are from Advanced Power innovated design and silicon process te
9.2. Size:71K ape
ap9928geo.pdf
AP9928GEO Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low on-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 23m G1 S1 Optimal DC/DC battery application S1 ID 5A TSSOP-8 D1 Description D1 D2 The Advanced Power MOSFETs from APEC provide the G1 G
9.3. Size:96K ape
ap9922geo-hf.pdf
AP9922GEO-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low on-resistance BVDSS 20V S2 S2 D2 Capable of 1.8V Gate Drive RDS(ON) 16m G1 S1 Optimal DC/DC Battery Application S1 ID 6.4A TSSOP-8 D1 RoHS Compliant & Halogen-Free D1 D2 Description G1 G2 Advanced Power MOSFETs from APEC provide the designer wi
9.4. Size:80K ape
ap9926go.pdf
AP9926GO Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low on-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 28m G1 S1 Low drive current S1 ID 4.6A TSSOP-8 D1 Surface mount package Description D2 The Advanced Power MOSFETs fr
9.5. Size:95K ape
ap9924ago-hf.pdf
AP9924AGO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low on-resistance BVDSS 20V Capable of 2.5V gate drive RDS(ON) 22m Halogen Free & RoHS Compliant Product ID 5A G2 S2 S2 D Description G1 S1 S1 TSSOP-8 D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
9.6. Size:60K ape
ap9926geo-hf.pdf
AP9926GEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 Low On-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V Gate Drive RDS(ON) 28m G1 S1 Low Drive Current S1 ID 4.6A TSSOP-8 D1 Surface Mount Package RoHS Compliant & Halogen-Free Description D1 D2 Advanced Power MOSFETs from APEC provide the G1
9.7. Size:92K ape
ap9924go.pdf
AP9924GO RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low on-resistance S2 BVDSS 20V S2 D Capable of 2.5V gate drive RDS(ON) 20m G1 S1 S1 RoHS Compliant ID 6.8A TSSOP-8 D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G2 G1 ruggedized devic
9.8. Size:106K ape
ap9920geo.pdf
AP9920GEO Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low on-resistance BVDSS 30V S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 28m G1 S1 Optimal DC/DC battery application S1 ID 4.9A TSSOP-8 D1 RoHS compliant Description The Advanced Power MOSFE
9.9. Size:167K ape
ap9926gm.pdf
AP9926GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20V D2 D2 D1 Capable of 2.5V Gate Drive RDS(ON) 30m D1 Surface Mount Package ID 6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description D2 D1 AP9926 series ar
9.10. Size:57K ape
ap9922ageo-hf.pdf
AP9922AGEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 Low On-resistance BVDSS 20V S2 S2 D2 Capable of 1.8V Gate Drive RDS(ON) 18m G1 S1 Optimal DC/DC Battery Application S1 ID 6A TSSOP-8 D1 Halogen Free & RoHS Compliant Product Description D1 D2 AP9922A series are from Advanced Power innovated des
9.11. Size:72K ape
ap9928gem.pdf
AP9928GEM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D2 D2 D1 Capable of 2.5V gate drive RDS(ON) 23m D1 Surface mount package ID 7.3A G2 S2 G1 SO-8 S1 Description D1 D2 The Advanced Power MOSFETs from APEC provide the G1 G2 designer
9.12. Size:87K ape
ap9926gem.pdf
AP9926GEM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D2 D2 Capable of 2.5V gate drive D1 RDS(ON) 30m D1 Low drive current ID 6A G2 S2 Surface mount package G1 SO-8 S1 Description The Advanced Power MOSFETs from APEC provide the D1 D2 designer with the best combination of fast sw
9.13. Size:144K ape
ap9926geo.pdf
AP9926GEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 Low On-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V Gate Drive RDS(ON) 28m G1 S1 Low Drive Current S1 ID 4.6A TSSOP-8 D1 Surface Mount Package RoHS Compliant & Halogen-Free Description D1 D2 Advanced Power MOSFETs from APEC provide the G1
9.14. Size:144K ape
ap9922geo.pdf
AP9922GEO-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low on-resistance BVDSS 20V S2 S2 D2 Capable of 1.8V Gate Drive RDS(ON) 16m G1 S1 S1 Optimal DC/DC Battery Application ID 6.4A TSSOP-8 D1 RoHS Compliant & Halogen-Free D1 D2 Description G1 G2 Advanced Power MOSFETs from APEC provide the designer wi
9.16. Size:1490K cn apm
ap9928a.pdf
AP9928A 20V N+N-Channel Enhancement Mode MOSFET Description The AP9928A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =10.5A DS D R
9.17. Size:1438K cn apm
ap9926a.pdf
AP9926A 20V N+N-Channel Enhancement Mode MOSFET Description The AP9926A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.5A DS D R
Otros transistores... AP9990GMT
, AP9979GH
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History: LSC65R290HF
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