AP9410GH Todos los transistores

 

AP9410GH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9410GH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 52 nS

Cossⓘ - Capacitancia de salida: 620 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO252

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AP9410GH datasheet

 ..1. Size:229K  ape
ap9410gh.pdf pdf_icon

AP9410GH

AP9410GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP9410 series are from Advanced Power innovated design and G D silicon process technology to achieve the lowes

 0.1. Size:94K  ape
ap9410gh-hf.pdf pdf_icon

AP9410GH

AP9410GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching, ruggedi

 7.1. Size:58K  ape
ap9410gmt-hf.pdf pdf_icon

AP9410GH

AP9410GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive D BVDSS 30V Simple Drive Requirement RDS(ON) 5.5m SO-8 Compatible ID 80A G Low On-resistance S RoHS Compliant & Halogen-Free D D D D Description Advanced Power MOSFETs from APEC provide the designer with the best combina

 7.2. Size:96K  ape
ap9410gm-hf.pdf pdf_icon

AP9410GH

AP9410GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 6m D D Fast Switching ID 18A G S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-

Otros transistores... AP9923GEO , AP9922GEO , AP97T07AGP , AP95T10AGP , AP95T07BGP , AP9579GJ , AP9467GH , AP9467AGH , IRF730 , AP9410AGH , AP93T03AGH , AP8N8R0P , AP8N8R0MT , AP8N8R0J , AP8N8R0I , AP8N8R0H , AP8N4R2MT .

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