AP8N8R0H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP8N8R0H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 42 nC
   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 960 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET AP8N8R0H

AP8N8R0H Datasheet (PDF)

..1. Size:241K ape
ap8n8r0h.pdf

AP8N8R0HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 80V Low On-resistance RDS(ON) 8m Fast Switching Characteristic ID 60AGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 series arefrom Advanced Power innovated designAP8N8R0 seriesare fromAdvanced Power innovated de

7.1. Size:219K ape
ap8n8r0i.pdf

AP8N8R0IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 80V Low On-resistance RDS(ON) 8m Fast Switching Characteristic ID 46AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP8N8R0 seriesare fromAdvanced Power innovated desig

7.2. Size:160K ape
ap8n8r0mt.pdf

AP8N8R0MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 80VD Simple Drive Requirement RDS(ON) 8m Lower On-resistance ID 60AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP8N8R0 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

7.3. Size:203K ape
ap8n8r0p.pdf

AP8N8R0PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 80V Low On-resistance RDS(ON) 8m Fast Switching Characteristic ID 60AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP8N8R0 seriesare fromAdvanced Power innovated desig

7.4. Size:206K ape
ap8n8r0j.pdf

AP8N8R0JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 80V Low On-resistance RDS(ON) 8m Fast Switching Characteristic ID 60AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP8N8R0 seriesare fromAdvanced Power innovated desig

Otros transistores... AP9467AGH , AP9410GH , AP9410AGH , AP93T03AGH , AP8N8R0P , AP8N8R0MT , AP8N8R0J , AP8N8R0I , IRF540 , AP8N4R2MT , AP8N3R5CMT , AP8604CDT , AP8600S , AP8600P , AP8600MT-L , AP8600MT , AP85T10AGP .

History: BST82

Liste

Recientemente añadidas las descripciónes de los transistores: