AP80SL990BJB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP80SL990BJB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 78.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.99 Ohm
   Paquete / Cubierta: TO251S

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AP80SL990BJB Datasheet (PDF)

..1. Size:181K ape
ap80sl990bjb.pdf

AP80SL990BJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL990B series are from Advanced Power innovated design andsilicon process technology to achieve the

4.1. Size:240K ape
ap80sl990bh.pdf

AP80SL990BHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL990B series are from Advanced Power innovated design andGsilicon process technology to achieve t

4.2. Size:217K ape
ap80sl990bi.pdf

AP80SL990BIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL990B series are from Advanced Power innovated design andsilicon process technology to achieve the

8.1. Size:173K ape
ap80sl400as.pdf

AP80SL400ASHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 850VD Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 12AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL400A series are from Advanced Power innovated design andsilicon process technology to achieve

8.2. Size:217K ape
ap80sl650ai.pdf

AP80SL650AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.65 Simple Drive Requirement ID3,4 8AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL650A series are from Advanced Power innovated designand silicon process technology to achieve the

8.3. Size:177K ape
ap80sl400ai.pdf

AP80SL400AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 850VD Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID3,4 12AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL400A series are from Advanced Power innovated design andsilicon process technology to achi

8.4. Size:161K ape
ap80sl400ap.pdf

AP80SL400APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID3 12AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL400A series are from Advanced Power innovated design andsilicon process technology to achieve the lo

8.5. Size:177K ape
ap80sl400di.pdf

AP80SL400DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID3,4 12AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL400D series are from Advanced Power innovated design andsilicon process technology to achieve the

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