AP80SL990BJB Todos los transistores

 

AP80SL990BJB MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP80SL990BJB

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 78.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 30 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.99 Ohm

Encapsulados: TO251S

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AP80SL990BJB datasheet

 ..1. Size:181K  ape
 ap80sl990bjb.pdf pdf_icon

AP80SL990BJB

AP80SL990BJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800V D Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7A G RoHS Compliant & Halogen-Free S Description AP80SL990B series are from Advanced Power innovated design and silicon process technology to achieve the

 4.1. Size:240K  ape
 ap80sl990bh.pdf pdf_icon

AP80SL990BJB

AP80SL990BH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800V D Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7A G RoHS Compliant & Halogen-Free S Description AP80SL990B series are from Advanced Power innovated design and G silicon process technology to achieve t

 4.2. Size:217K  ape
 ap80sl990bi.pdf pdf_icon

AP80SL990BJB

AP80SL990BI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800V D Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7A G RoHS Compliant & Halogen-Free S Description AP80SL990B series are from Advanced Power innovated design and silicon process technology to achieve the

 8.1. Size:173K  ape
 ap80sl400as.pdf pdf_icon

AP80SL990BJB

AP80SL400AS Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 850V D Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 12A G RoHS Compliant & Halogen-Free S Description AP80SL400A series are from Advanced Power innovated design and silicon process technology to achieve

MOSTRAR MÁS

Otros transistores... AP8N3R5CMT , AP8604CDT , AP8600S , AP8600P , AP8600MT-L , AP8600MT , AP85T10AGP , AP80WN2K5I , AO3400 , AP80SL990BI , AP80SL990BH , AP80SL650AI , AP80SL400DI , AP80SL400AS , AP80SL400AP , AP80SL400AI , AP78T10GP .

History: R6504KNJ | TPCM8004-H | 2SK1916 | WM03N01H | TPCM8003-H | GM3401 | TK39N60W

 

 

 

 

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