AP80SL990BJB MOSFET. Datasheet pdf. Equivalent
Type Designator: AP80SL990BJB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 78.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 5.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 27 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.99 Ohm
Package: TO251S
AP80SL990BJB Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP80SL990BJB Datasheet (PDF)
ap80sl990bjb.pdf
AP80SL990BJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL990B series are from Advanced Power innovated design andsilicon process technology to achieve the
ap80sl990bh.pdf
AP80SL990BHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL990B series are from Advanced Power innovated design andGsilicon process technology to achieve t
ap80sl990bi.pdf
AP80SL990BIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL990B series are from Advanced Power innovated design andsilicon process technology to achieve the
ap80sl400as.pdf
AP80SL400ASHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 850VD Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 12AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL400A series are from Advanced Power innovated design andsilicon process technology to achieve
ap80sl650ai.pdf
AP80SL650AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.65 Simple Drive Requirement ID3,4 8AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL650A series are from Advanced Power innovated designand silicon process technology to achieve the
ap80sl400ai.pdf
AP80SL400AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 850VD Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID3,4 12AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL400A series are from Advanced Power innovated design andsilicon process technology to achi
ap80sl400ap.pdf
AP80SL400APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID3 12AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL400A series are from Advanced Power innovated design andsilicon process technology to achieve the lo
ap80sl400di.pdf
AP80SL400DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID3,4 12AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL400D series are from Advanced Power innovated design andsilicon process technology to achieve the
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SMK0860P
History: SMK0860P
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