All MOSFET. AP80SL990BJB Datasheet

 

AP80SL990BJB Datasheet and Replacement


   Type Designator: AP80SL990BJB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.99 Ohm
   Package: TO251S
 

 AP80SL990BJB substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP80SL990BJB Datasheet (PDF)

 ..1. Size:181K  ape
ap80sl990bjb.pdf pdf_icon

AP80SL990BJB

AP80SL990BJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL990B series are from Advanced Power innovated design andsilicon process technology to achieve the

 4.1. Size:240K  ape
ap80sl990bh.pdf pdf_icon

AP80SL990BJB

AP80SL990BHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL990B series are from Advanced Power innovated design andGsilicon process technology to achieve t

 4.2. Size:217K  ape
ap80sl990bi.pdf pdf_icon

AP80SL990BJB

AP80SL990BIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL990B series are from Advanced Power innovated design andsilicon process technology to achieve the

 8.1. Size:173K  ape
ap80sl400as.pdf pdf_icon

AP80SL990BJB

AP80SL400ASHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 850VD Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 12AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL400A series are from Advanced Power innovated design andsilicon process technology to achieve

Datasheet: AP8N3R5CMT , AP8604CDT , AP8600S , AP8600P , AP8600MT-L , AP8600MT , AP85T10AGP , AP80WN2K5I , IRF3710 , AP80SL990BI , AP80SL990BH , AP80SL650AI , AP80SL400DI , AP80SL400AS , AP80SL400AP , AP80SL400AI , AP78T10GP .

History: QM6016P | IPB34CN10N | FQD2N50TF | P0460EI | AUIRF8739L2 | P2610BT | DMN3035LWN

Keywords - AP80SL990BJB MOSFET datasheet

 AP80SL990BJB cross reference
 AP80SL990BJB equivalent finder
 AP80SL990BJB lookup
 AP80SL990BJB substitution
 AP80SL990BJB replacement

 

 
Back to Top

 


 
.