AP80SL990BJB PDF and Equivalents Search

 

AP80SL990BJB Specs and Replacement

Type Designator: AP80SL990BJB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 30 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.99 Ohm

Package: TO251S

AP80SL990BJB substitution

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AP80SL990BJB datasheet

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 ap80sl990bjb.pdf pdf_icon

AP80SL990BJB

AP80SL990BJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800V D Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7A G RoHS Compliant & Halogen-Free S Description AP80SL990B series are from Advanced Power innovated design and silicon process technology to achieve the... See More ⇒

 4.1. Size:240K  ape
 ap80sl990bh.pdf pdf_icon

AP80SL990BJB

AP80SL990BH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800V D Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7A G RoHS Compliant & Halogen-Free S Description AP80SL990B series are from Advanced Power innovated design and G silicon process technology to achieve t... See More ⇒

 4.2. Size:217K  ape
 ap80sl990bi.pdf pdf_icon

AP80SL990BJB

AP80SL990BI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800V D Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7A G RoHS Compliant & Halogen-Free S Description AP80SL990B series are from Advanced Power innovated design and silicon process technology to achieve the ... See More ⇒

 8.1. Size:173K  ape
 ap80sl400as.pdf pdf_icon

AP80SL990BJB

AP80SL400AS Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 850V D Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 12A G RoHS Compliant & Halogen-Free S Description AP80SL400A series are from Advanced Power innovated design and silicon process technology to achieve... See More ⇒

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Detailed specifications: AP8N3R5CMT , AP8604CDT , AP8600S , AP8600P , AP8600MT-L , AP8600MT , AP85T10AGP , AP80WN2K5I , AO3400 , AP80SL990BI , AP80SL990BH , AP80SL650AI , AP80SL400DI , AP80SL400AS , AP80SL400AP , AP80SL400AI , AP78T10GP .

History: AP85U03GM-HF | AUIRFR3607

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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