AP80SL650AI Todos los transistores

 

AP80SL650AI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP80SL650AI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
   Paquete / Cubierta: TO220F
 

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AP80SL650AI Datasheet (PDF)

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 ap80sl650ai.pdf pdf_icon

AP80SL650AI

AP80SL650AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.65 Simple Drive Requirement ID3,4 8AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL650A series are from Advanced Power innovated designand silicon process technology to achieve the

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 ap80sl990bh.pdf pdf_icon

AP80SL650AI

AP80SL990BHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL990B series are from Advanced Power innovated design andGsilicon process technology to achieve t

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 ap80sl400as.pdf pdf_icon

AP80SL650AI

AP80SL400ASHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 850VD Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 12AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL400A series are from Advanced Power innovated design andsilicon process technology to achieve

 8.3. Size:217K  ape
 ap80sl990bi.pdf pdf_icon

AP80SL650AI

AP80SL990BIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL990B series are from Advanced Power innovated design andsilicon process technology to achieve the

MOSTRAR MÁS

Otros transistores... AP8600P , AP8600MT-L , AP8600MT , AP85T10AGP , AP80WN2K5I , AP80SL990BJB , AP80SL990BI , AP80SL990BH , 7N65 , AP80SL400DI , AP80SL400AS , AP80SL400AP , AP80SL400AI , AP78T10GP , AP76T03AGMT , AP75T12GI , AP70WN2K8L .

History: SQM110P06-07L | AP4418GH | PTA12N60 | KF10N60F | TK17N65W | APT1201R4BLL | JCS3N80C

 

 
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