AP80SL650AI Todos los transistores

 

AP80SL650AI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP80SL650AI

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm

Encapsulados: TO220F

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AP80SL650AI datasheet

 ..1. Size:217K  ape
ap80sl650ai.pdf pdf_icon

AP80SL650AI

AP80SL650AI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800V D Fast Switching Characteristic RDS(ON) 0.65 Simple Drive Requirement ID3,4 8A G RoHS Compliant & Halogen-Free S Description AP80SL650A series are from Advanced Power innovated design and silicon process technology to achieve the

 8.1. Size:240K  ape
ap80sl990bh.pdf pdf_icon

AP80SL650AI

AP80SL990BH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800V D Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7A G RoHS Compliant & Halogen-Free S Description AP80SL990B series are from Advanced Power innovated design and G silicon process technology to achieve t

 8.2. Size:173K  ape
ap80sl400as.pdf pdf_icon

AP80SL650AI

AP80SL400AS Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 850V D Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 12A G RoHS Compliant & Halogen-Free S Description AP80SL400A series are from Advanced Power innovated design and silicon process technology to achieve

 8.3. Size:217K  ape
ap80sl990bi.pdf pdf_icon

AP80SL650AI

AP80SL990BI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800V D Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7A G RoHS Compliant & Halogen-Free S Description AP80SL990B series are from Advanced Power innovated design and silicon process technology to achieve the

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