Справочник MOSFET. AP80SL650AI

 

AP80SL650AI Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP80SL650AI
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 34.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

AP80SL650AI Datasheet (PDF)

 ..1. Size:217K  ape
 ap80sl650ai.pdf pdf_icon

AP80SL650AI

AP80SL650AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.65 Simple Drive Requirement ID3,4 8AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL650A series are from Advanced Power innovated designand silicon process technology to achieve the

 8.1. Size:240K  ape
 ap80sl990bh.pdf pdf_icon

AP80SL650AI

AP80SL990BHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL990B series are from Advanced Power innovated design andGsilicon process technology to achieve t

 8.2. Size:173K  ape
 ap80sl400as.pdf pdf_icon

AP80SL650AI

AP80SL400ASHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 850VD Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 12AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL400A series are from Advanced Power innovated design andsilicon process technology to achieve

 8.3. Size:217K  ape
 ap80sl990bi.pdf pdf_icon

AP80SL650AI

AP80SL990BIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL990B series are from Advanced Power innovated design andsilicon process technology to achieve the

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Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCEP058N85M | AP2306CGN-HF | SSB80R380S2 | 2SK2407 | ECH8602M | STD5NM60-1 | QM3002V

 

 
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