AP80SL400AP Todos los transistores

 

AP80SL400AP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP80SL400AP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 152 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO220

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AP80SL400AP datasheet

 ..1. Size:161K  ape
ap80sl400ap.pdf pdf_icon

AP80SL400AP

AP80SL400AP Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800V D Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID3 12A G RoHS Compliant & Halogen-Free S Description AP80SL400A series are from Advanced Power innovated design and silicon process technology to achieve the lo

 4.1. Size:173K  ape
ap80sl400as.pdf pdf_icon

AP80SL400AP

AP80SL400AS Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 850V D Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 12A G RoHS Compliant & Halogen-Free S Description AP80SL400A series are from Advanced Power innovated design and silicon process technology to achieve

 4.2. Size:177K  ape
ap80sl400ai.pdf pdf_icon

AP80SL400AP

AP80SL400AI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 850V D Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID3,4 12A G RoHS Compliant & Halogen-Free S Description AP80SL400A series are from Advanced Power innovated design and silicon process technology to achi

 5.1. Size:177K  ape
ap80sl400di.pdf pdf_icon

AP80SL400AP

AP80SL400DI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800V D Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID3,4 12A G RoHS Compliant & Halogen-Free S Description AP80SL400D series are from Advanced Power innovated design and silicon process technology to achieve the

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