AP80SL400AP - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP80SL400AP
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 152 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 23 ns
Cossⓘ - Выходная емкость: 60 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
Тип корпуса: TO220
Аналог (замена) для AP80SL400AP
AP80SL400AP Datasheet (PDF)
ap80sl400ap.pdf
AP80SL400APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID3 12AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL400A series are from Advanced Power innovated design andsilicon process technology to achieve the lo
ap80sl400as.pdf
AP80SL400ASHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 850VD Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 12AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL400A series are from Advanced Power innovated design andsilicon process technology to achieve
ap80sl400ai.pdf
AP80SL400AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 850VD Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID3,4 12AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL400A series are from Advanced Power innovated design andsilicon process technology to achi
ap80sl400di.pdf
AP80SL400DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID3,4 12AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL400D series are from Advanced Power innovated design andsilicon process technology to achieve the
Другие MOSFET... AP85T10AGP , AP80WN2K5I , AP80SL990BJB , AP80SL990BI , AP80SL990BH , AP80SL650AI , AP80SL400DI , AP80SL400AS , 2N7000 , AP80SL400AI , AP78T10GP , AP76T03AGMT , AP75T12GI , AP70WN2K8L , AP70WN2K8I , AP70WN2K8H , AP70WN1K5P .
History: AP76T03AGMT | PSMN2R5-60PL | IPA65R660CFD | PSMN2R0-30YLE | IPA90R1K2C3 | SL3134K | PSMN2R6-60PS
History: AP76T03AGMT | PSMN2R5-60PL | IPA65R660CFD | PSMN2R0-30YLE | IPA90R1K2C3 | SL3134K | PSMN2R6-60PS
Список транзисторов
Обновления
MOSFET: AGM610MN | AGM610M | AGM60P90D | AGM60P90A | AGM60P85E | AGM60P85D | AGM60P85AP | AGM60P40D | AGM60P40A | AGM60P35F | AGM60P30D | AGM60P30C | AGM60P30AP | AGM60P30A | AGM406MNQ | AGM406MNA
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