AP70SL500AI Todos los transistores

 

AP70SL500AI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP70SL500AI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

AP70SL500AI Datasheet (PDF)

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AP70SL500AI

AP70SL500AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 0.5 Simple Drive Requirement ID3,4 8.8AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL500A series are from Advanced Power innovated design andsilicon process technology to ach

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AP70SL500AI

AP70SL500AJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 0.5 Simple Drive Requirement ID3 8.8AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL500A series are from Advanced Power innovated design andsilicon process technology to achi

 4.2. Size:198K  ape
 ap70sl500ap.pdf pdf_icon

AP70SL500AI

AP70SL500APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 0.5 Simple Drive Requirement ID3 8.8AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL500A series are from Advanced Power innovated design andsilicon process technology to achie

 4.3. Size:236K  ape
 ap70sl500ah.pdf pdf_icon

AP70SL500AI

AP70SL500AHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 0.5 Simple Drive Requirement ID3 8.8AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL500A series are from Advanced Power innovated design andGsilicon process technology to ac

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: CS6N120P

 

 
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