Справочник MOSFET. AP70SL500AI

 

AP70SL500AI Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP70SL500AI
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 31.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

AP70SL500AI Datasheet (PDF)

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 ap70sl500ai.pdf pdf_icon

AP70SL500AI

AP70SL500AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 0.5 Simple Drive Requirement ID3,4 8.8AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL500A series are from Advanced Power innovated design andsilicon process technology to ach

 4.1. Size:177K  ape
 ap70sl500ajb.pdf pdf_icon

AP70SL500AI

AP70SL500AJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 0.5 Simple Drive Requirement ID3 8.8AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL500A series are from Advanced Power innovated design andsilicon process technology to achi

 4.2. Size:198K  ape
 ap70sl500ap.pdf pdf_icon

AP70SL500AI

AP70SL500APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 0.5 Simple Drive Requirement ID3 8.8AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL500A series are from Advanced Power innovated design andsilicon process technology to achie

 4.3. Size:236K  ape
 ap70sl500ah.pdf pdf_icon

AP70SL500AI

AP70SL500AHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 0.5 Simple Drive Requirement ID3 8.8AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL500A series are from Advanced Power innovated design andGsilicon process technology to ac

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Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: JFAM20N50E | BUZ100SL-4 | IRC330 | R6524KNX | PDC3903Z | SLC500MM15SHN2 | SI2301ADS-T1

 

 
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