AP70SL1K4BJB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP70SL1K4BJB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 15 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO251S

Búsqueda de reemplazo de MOSFET AP70SL1K4BJB

AP70SL1K4BJB Datasheet (PDF)

..1. Size:146K ape
ap70sl1k4bjb.pdf

AP70SL1K4BJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL1K4B series are from Advanced Power innovated designand silicon process technology to achieve the

4.1. Size:109K ape
ap70sl1k4bk2.pdf

AP70SL1K4BK2Halogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDDescriptionAP70SL1K4B series are from Advanced Power innovated designSand silicon process technology to achiev

4.2. Size:206K ape
ap70sl1k4bh.pdf

AP70SL1K4BHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL1K4B series are from Advanced Power innovated designGand silicon process technology to achieve th

5.1. Size:181K ape
ap70sl1k4ajb.pdf

AP70SL1K4AJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL1K4A series are from Advanced Power innovated designand silicon process technology to achi

5.2. Size:203K ape
ap70sl1k4ah.pdf

AP70SL1K4AHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL1K4A series are from Advanced Power innovated designGand silicon process technology to ac

5.3. Size:178K ape
ap70sl1k4ai.pdf

AP70SL1K4AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3,4 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL1K4A series are from Advanced Power innovated designand silicon process technology to achieve the

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BS170RLRP

Liste

Recientemente añadidas las descripciónes de los transistores: