AP70SL1K4BJB MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP70SL1K4BJB
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 28.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 15 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO251S
Аналог (замена) для AP70SL1K4BJB
AP70SL1K4BJB Datasheet (PDF)
ap70sl1k4bjb.pdf
AP70SL1K4BJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL1K4B series are from Advanced Power innovated designand silicon process technology to achieve the
ap70sl1k4bk2.pdf
AP70SL1K4BK2Halogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDDescriptionAP70SL1K4B series are from Advanced Power innovated designSand silicon process technology to achiev
ap70sl1k4bh.pdf
AP70SL1K4BHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL1K4B series are from Advanced Power innovated designGand silicon process technology to achieve th
ap70sl1k4ajb.pdf
AP70SL1K4AJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL1K4A series are from Advanced Power innovated designand silicon process technology to achi
ap70sl1k4ah.pdf
AP70SL1K4AHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL1K4A series are from Advanced Power innovated designGand silicon process technology to ac
ap70sl1k4ai.pdf
AP70SL1K4AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3,4 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL1K4A series are from Advanced Power innovated designand silicon process technology to achieve the
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918