AP70SL1K4BJB Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP70SL1K4BJB
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 28.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 15 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO251S
- подбор MOSFET транзистора по параметрам
AP70SL1K4BJB Datasheet (PDF)
ap70sl1k4bjb.pdf

AP70SL1K4BJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL1K4B series are from Advanced Power innovated designand silicon process technology to achieve the
ap70sl1k4bk2.pdf

AP70SL1K4BK2Halogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDDescriptionAP70SL1K4B series are from Advanced Power innovated designSand silicon process technology to achiev
ap70sl1k4bh.pdf

AP70SL1K4BHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL1K4B series are from Advanced Power innovated designGand silicon process technology to achieve th
ap70sl1k4ajb.pdf

AP70SL1K4AJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL1K4A series are from Advanced Power innovated designand silicon process technology to achi
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRLR3714Z | IPU60R1K0CE
History: IRLR3714Z | IPU60R1K0CE



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