AP6P090J Todos los transistores

 

AP6P090J MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6P090J

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: TO251

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AP6P090J datasheet

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ap6p090j.pdf pdf_icon

AP6P090J

AP6P090J Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description AP6P090 series are from Advanced Power innovated design and G D silicon process technology to achieve the low

 7.1. Size:204K  ape
ap6p090h.pdf pdf_icon

AP6P090J

AP6P090H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description AP6P090 series are from Advanced Power innovated design and G D S silicon process technology to achieve the l

 7.2. Size:186K  ape
ap6p090m.pdf pdf_icon

AP6P090J

AP6P090M Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID3 -4A G RoHS Compliant & Halogen-Free S Description D D AP6P090 series are from Advanced Power innovated design and silicon D D process technology to achieve t

 9.1. Size:181K  ape
ap6p064i.pdf pdf_icon

AP6P090J

AP6P064I Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID4 -17A G RoHS Compliant & Halogen-Free S Description AP6P064 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p

Otros transistores... AP70SL250AS , AP70SL250AI , AP70SL1K4BJB , AP70SL1K4BH , AP70SL1K4AJB , AP70SL1K4AI , AP70SL1K4AH , AP70PN1R1I , NCEP15T14 , AP6P090H , AP6P070S , AP6P070P , AP6P070I , AP6P070H , AP6P064JB , AP6P064J , AP6P064I .

 

 

 

 

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