AP6P070H Todos los transistores

 

AP6P070H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP6P070H
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO252
 

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AP6P070H Datasheet (PDF)

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AP6P070H

AP6P070HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16AG RoHS Compliant & Halogen-FreeSDescriptionAP6P070 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the l

 7.1. Size:182K  ape
 ap6p070i.pdf pdf_icon

AP6P070H

AP6P070IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID4 -16AG RoHS Compliant & Halogen-FreeSDescriptionAP6P070 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

 7.2. Size:165K  ape
 ap6p070p.pdf pdf_icon

AP6P070H

AP6P070PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16AG RoHS Compliant & Halogen-FreeSDescriptionAP6P070 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

 7.3. Size:71K  ape
 ap6p070s.pdf pdf_icon

AP6P070H

AP6P070SHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16AG RoHS Compliant & Halogen-FreeSDescriptionAP6P070 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

MOSTRAR MÁS

Otros transistores... AP70SL1K4AI , AP70SL1K4AH , AP70PN1R1I , AP6P090J , AP6P090H , AP6P070S , AP6P070P , AP6P070I , P60NF06 , AP6P064JB , AP6P064J , AP6P064I , AP6P064H , AP6P025S , AP6P025P , AP6P025I , AP6P025H .

History: BSO207P | NTD18N06G | SFF70N04S | RD3L140SP | IRFPF42 | BSO203P | RD3P100SN

 

 
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