AP6P070H - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP6P070H
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 32.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 110 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
Тип корпуса: TO252
Аналог (замена) для AP6P070H
AP6P070H Datasheet (PDF)
ap6p070h.pdf
AP6P070HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16AG RoHS Compliant & Halogen-FreeSDescriptionAP6P070 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the l
ap6p070i.pdf
AP6P070IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID4 -16AG RoHS Compliant & Halogen-FreeSDescriptionAP6P070 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
ap6p070p.pdf
AP6P070PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16AG RoHS Compliant & Halogen-FreeSDescriptionAP6P070 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
ap6p070s.pdf
AP6P070SHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16AG RoHS Compliant & Halogen-FreeSDescriptionAP6P070 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
Другие MOSFET... AP70SL1K4AI , AP70SL1K4AH , AP70PN1R1I , AP6P090J , AP6P090H , AP6P070S , AP6P070P , AP6P070I , AO4407 , AP6P064JB , AP6P064J , AP6P064I , AP6P064H , AP6P025S , AP6P025P , AP6P025I , AP6P025H .
History: FDR856P
History: FDR856P
Список транзисторов
Обновления
MOSFET: AGM610MN | AGM610M | AGM60P90D | AGM60P90A | AGM60P85E | AGM60P85D | AGM60P85AP | AGM60P40D | AGM60P40A | AGM60P35F | AGM60P30D | AGM60P30C | AGM60P30AP | AGM60P30A | AGM406MNQ | AGM406MNA
Popular searches
a1941 datasheet | hrf3205 | c2837 datasheet | 2n414 | c3998 | c4468 datasheet | 2sc2603 | jcs50n20wt





