AP6P064JB Todos los transistores

 

AP6P064JB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP6P064JB
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.064 Ohm
   Paquete / Cubierta: TO251S
 

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AP6P064JB Datasheet (PDF)

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 ap6p064jb.pdf pdf_icon

AP6P064JB

AP6P064JBHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

 6.1. Size:168K  ape
 ap6p064j.pdf pdf_icon

AP6P064JB

AP6P064JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andGDsilicon process technology to achieve the low

 7.1. Size:181K  ape
 ap6p064i.pdf pdf_icon

AP6P064JB

AP6P064IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID4 -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

 7.2. Size:204K  ape
 ap6p064h.pdf pdf_icon

AP6P064JB

AP6P064HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the l

MOSTRAR MÁS

Otros transistores... AP70SL1K4AH , AP70PN1R1I , AP6P090J , AP6P090H , AP6P070S , AP6P070P , AP6P070I , AP6P070H , CS150N03A8 , AP6P064J , AP6P064I , AP6P064H , AP6P025S , AP6P025P , AP6P025I , AP6P025H , AP6N8R2LMT .

History: AP88N30W | PHX27NQ11T | IPD50N12S3L-15 | CS3N50DU | KP819AC | IRF6714M | MMFT5P03HDT1

 

 
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