AP6P064JB - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP6P064JB
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 33.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 17 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 110 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.064 Ohm
Тип корпуса: TO251S
Аналог (замена) для AP6P064JB
AP6P064JB Datasheet (PDF)
ap6p064jb.pdf

AP6P064JBHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
ap6p064j.pdf

AP6P064JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andGDsilicon process technology to achieve the low
ap6p064i.pdf

AP6P064IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID4 -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
ap6p064h.pdf

AP6P064HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the l
Другие MOSFET... AP70SL1K4AH , AP70PN1R1I , AP6P090J , AP6P090H , AP6P070S , AP6P070P , AP6P070I , AP6P070H , CS150N03A8 , AP6P064J , AP6P064I , AP6P064H , AP6P025S , AP6P025P , AP6P025I , AP6P025H , AP6N8R2LMT .
History: GSM9977 | NVMFS6H800NL | AP6P064J | STB14NK50Z
History: GSM9977 | NVMFS6H800NL | AP6P064J | STB14NK50Z



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