AP6P025P Todos los transistores

 

AP6P025P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6P025P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 62.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 240 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO220

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AP6P025P datasheet

 ..1. Size:165K  ape
ap6p025p.pdf pdf_icon

AP6P025P

AP6P025P Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description AP6P025 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

 7.1. Size:67K  ape
ap6p025m.pdf pdf_icon

AP6P025P

AP6P025M Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID3 -7.3A G RoHS Compliant & Halogen-Free S Description D D AP6P025 series are from Advanced Power innovated design and silicon D D process technology to achieve

 7.2. Size:204K  ape
ap6p025h.pdf pdf_icon

AP6P025P

AP6P025H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description AP6P025 series are from Advanced Power innovated design and G D silicon process technology to achieve the low

 7.3. Size:177K  ape
ap6p025s.pdf pdf_icon

AP6P025P

AP6P025S Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description AP6P025 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

Otros transistores... AP6P070P , AP6P070I , AP6P070H , AP6P064JB , AP6P064J , AP6P064I , AP6P064H , AP6P025S , 10N65 , AP6P025I , AP6P025H , AP6N8R2LMT , AP6N8R2ALH , AP6N6R5P , AP6N6R5LMT-L , AP6N6R5LMT , AP6N6R5I .

 

 

 


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