AP6P025P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6P025P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 240 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de AP6P025P MOSFET
AP6P025P Datasheet (PDF)
ap6p025p.pdf
AP6P025PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAP6P025 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
ap6p025m.pdf
AP6P025MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID3 -7.3AG RoHS Compliant & Halogen-FreeSDescriptionDDAP6P025 series are from Advanced Power innovated design and siliconDDprocess technology to achieve
ap6p025h.pdf
AP6P025HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAP6P025 series are from Advanced Power innovated design andGDsilicon process technology to achieve the low
ap6p025s.pdf
AP6P025SHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAP6P025 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
Otros transistores... AP6P070P , AP6P070I , AP6P070H , AP6P064JB , AP6P064J , AP6P064I , AP6P064H , AP6P025S , 10N65 , AP6P025I , AP6P025H , AP6N8R2LMT , AP6N8R2ALH , AP6N6R5P , AP6N6R5LMT-L , AP6N6R5LMT , AP6N6R5I .
History: IPB77N06S2-12 | DSKTJ08 | DSKTJ07 | DSKTJ04 | AP6P025H | 2SK2809-01MR
History: IPB77N06S2-12 | DSKTJ08 | DSKTJ07 | DSKTJ04 | AP6P025H | 2SK2809-01MR
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AGM610MN | AGM610M | AGM60P90D | AGM60P90A | AGM60P85E | AGM60P85D | AGM60P85AP | AGM60P40D | AGM60P40A | AGM60P35F | AGM60P30D | AGM60P30C | AGM60P30AP | AGM60P30A | AGM406MNQ | AGM406MNA
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