AP6P025P Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP6P025P
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 62.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 240 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
Тип корпуса: TO220
Аналог (замена) для AP6P025P
AP6P025P Datasheet (PDF)
ap6p025p.pdf

AP6P025PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAP6P025 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
ap6p025m.pdf

AP6P025MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID3 -7.3AG RoHS Compliant & Halogen-FreeSDescriptionDDAP6P025 series are from Advanced Power innovated design and siliconDDprocess technology to achieve
ap6p025h.pdf

AP6P025HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAP6P025 series are from Advanced Power innovated design andGDsilicon process technology to achieve the low
ap6p025s.pdf

AP6P025SHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAP6P025 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
Другие MOSFET... AP6P070P , AP6P070I , AP6P070H , AP6P064JB , AP6P064J , AP6P064I , AP6P064H , AP6P025S , STP80NF70 , AP6P025I , AP6P025H , AP6N8R2LMT , AP6N8R2ALH , AP6N6R5P , AP6N6R5LMT-L , AP6N6R5LMT , AP6N6R5I .
History: AP75T10GP | HGP130N12SL | 2SK655 | PM516BZ | NCEP40P65QU | P5015BD
History: AP75T10GP | HGP130N12SL | 2SK655 | PM516BZ | NCEP40P65QU | P5015BD



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