AP6N6R5I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6N6R5I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 52.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 47 nS
Cossⓘ - Capacitancia de salida: 1370 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET AP6N6R5I
AP6N6R5I Datasheet (PDF)
ap6n6r5i.pdf
AP6N6R5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6.5m Fast Switching Characteristic ID 52.7AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N6R5 seriesare fromAdvanced Power innovated
ap6n6r5lmt.pdf
AP6N6R5LMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60VD SO-8 Compatible with Heatsink RDS(ON) 6.5m Lower On-resistance ID 68AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP6N6R5L series are from Advanced Power innovated design andsilicon process technology to achieve the
ap6n6r5h.pdf
AP6N6R5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 60V Ultra-low On-resistance RDS(ON) 6.5m Fast Switching Characteristic ID 68AGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 series arefrom Advanced Power innovated designAP6N6R5 seriesare fromAdvanced Power inno
ap6n6r5p.pdf
AP6N6R5PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6.58m Fast Switching Characteristic ID 68AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N6R5 seriesare fromAdvanced Power innovated
ap6n6r5lmt-l.pdf
AP6N6R5LMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60VD SO-8 Compatible with Heatsink RDS(ON) 6.5m Lower On-resistance ID 68AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP6N6R5L series are from Advanced Power innovated design andsilicon process technology to achieve t
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918