AP6N4R0I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6N4R0I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 75 nS
Cossⓘ - Capacitancia de salida: 2400 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00399 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de AP6N4R0I MOSFET
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AP6N4R0I datasheet
ap6n4r0i.pdf
AP6N4R0I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.99m Lower On-resistance ID4 70A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N4R0 seriesare fromAdvanced Power innovated design an
ap6n4r2p.pdf
AP6N4R2P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 4.2m Fast Switching Characteristic ID 115A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N4R2 seriesare fromAdvanced Power innovated d
ap6n40d.pdf
AP6N40D 400V N-Channel Enhancement Mode MOSFET Description The AP6N40D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera
Otros transistores... AP6N8R2LMT , AP6N8R2ALH , AP6N6R5P , AP6N6R5LMT-L , AP6N6R5LMT , AP6N6R5I , AP6N6R5H , AP6N4R2P , 2N60 , AP6N3R8H , AP6N3R7MT-L , AP6N3R7MT , AP6N3R5S , AP6N3R5P , AP6N3R5LIN , AP6N3R5LI , AP6N3R5I .
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Recientemente añadidas las descripciónes de los transistores:
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