All MOSFET. AP6N4R0I Datasheet

 

AP6N4R0I Datasheet and Replacement


   Type Designator: AP6N4R0I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 2400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00399 Ohm
   Package: TO220F
 

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AP6N4R0I Datasheet (PDF)

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AP6N4R0I

AP6N4R0IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.99m Lower On-resistance ID4 70AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N4R0 seriesare fromAdvanced Power innovated designan

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AP6N4R0I

AP6N4R2PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 4.2m Fast Switching Characteristic ID 115AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N4R2 seriesare fromAdvanced Power innovated d

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