IRFI3710 Todos los transistores

 

IRFI3710 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFI3710

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 48 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 28 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.025 Ohm

Empaquetado / Estuche: TO220

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IRFI3710 Datasheet (PDF)

1.1. irfi3710.pdf Size:145K _international_rectifier

IRFI3710
IRFI3710

PD - 9.1387B IRFI3710 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.025? Fully Avalanche Rated G Description ID = 32A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely low on-resista

5.1. irfi3306g.pdf Size:667K _update-mosfet

IRFI3710
IRFI3710

IRFI3306GPbF HEXFET® Power MOSFET Applications VDSS 60V  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply RDS(on) typ. 3.3m  High Speed Power Switching max. 4.2m  Hard Switched and High Frequency Circuits ID 71A Benefits D  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacit

5.2. irfi3205.pdf Size:107K _international_rectifier

IRFI3710
IRFI3710

PD - 9.1374B IRFI3205 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.008? Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 64A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 5.3. irfi360.pdf Size:210K _international_rectifier

IRFI3710
IRFI3710

5.4. irfi3205pbf.pdf Size:277K _international_rectifier

IRFI3710
IRFI3710

PD - 95040A IRFI3205PbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.008Ω G l Fully Avalanche Rated l Lead-Free ID = 64A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

 5.5. irfi3205.pdf Size:201K _inchange_semiconductor

IRFI3710
IRFI3710

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI3205 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T

5.6. irfi3306g.pdf Size:200K _inchange_semiconductor

IRFI3710
IRFI3710

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI3306G ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(

Otros transistores... IRFF9120 , IRFF9130 , IRFF9210 , IRFF9220 , IRFF9230 , IRFI1010N , IRFI1310N , IRFI3205 , 2N7002 , IRFI460 , IRFI4905 , IRFI510A , IRFI520A , IRFI520N , IRFI5210 , IRFI530A , IRFI530N .

 

 
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