IRFI3710
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFI3710
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 63
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 32
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 190(max)
nC
trⓘ - Rise Time: 59
nS
Cossⓘ -
Output Capacitance: 640
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025
Ohm
Package:
TO220F
IRFI3710
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFI3710
Datasheet (PDF)
..1. Size:145K international rectifier
irfi3710.pdf 
PD - 9.1387BIRFI3710PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.025 Fully Avalanche RatedGDescriptionID = 32AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremely low on-r
9.1. Size:277K international rectifier
irfi3205pbf.pdf
PD - 95040AIRFI3205PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.008Gl Fully Avalanche Ratedl Lead-FreeID = 64ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techni
9.3. Size:235K international rectifier
auirfi3205.pdf
PD - 97764AUTOMOTIVE GRADEAUIRFI3205FeaturesHEXFET Power MOSFET Advanced Planar Technology Low On-ResistanceV(BR)DSS55V Isolated Package High Voltage Isolation = 2.5KVRMSRDS(on) max.0.008 Sink to Lead Creepage Distance = 4.8mm 175C Operating TemperatureID64A Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualifi
9.4. Size:107K international rectifier
irfi3205.pdf
PD - 9.1374BIRFI3205HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.008 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 64ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme
9.5. Size:505K infineon
irfi3205pbf.pdf
IRFI3205PbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.008 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 64A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn
9.6. Size:667K infineon
irfi3306g.pdf
IRFI3306GPbF HEXFET Power MOSFET Applications VDSS 60V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 3.3m High Speed Power Switching max. 4.2m Hard Switched and High Frequency Circuits ID 71A Benefits D Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacit
9.7. Size:201K inchange semiconductor
irfi3205.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI3205FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
9.8. Size:200K inchange semiconductor
irfi3306g.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI3306GFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(
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