AP6N3R0LMT Todos los transistores

 

AP6N3R0LMT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6N3R0LMT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 32.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 62 nS

Cossⓘ - Capacitancia de salida: 2900 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00299 Ohm

Encapsulados: PMPAK5X6

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AP6N3R0LMT datasheet

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 ap6n3r0lmt.pdf pdf_icon

AP6N3R0LMT

AP6N3R0LMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60V D Simple Drive Requirement RDS(ON) 2.99m Lower On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP6N3R0L series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos

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 ap6n3r5i.pdf pdf_icon

AP6N3R0LMT

AP6N3R5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 72A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N3R5 seriesare fromAdvanced Power innovated design and a

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 ap6n3r8h.pdf pdf_icon

AP6N3R0LMT

AP6N3R8H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.8m Fast Switching Characteristic ID5 155A G RoHS Compliant & Halogen-Free S Description G AP6N3R8 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology to

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 ap6n3r4cmt.pdf pdf_icon

AP6N3R0LMT

AP6N3R4CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D SO-8 Compatible with Heatsink RDS(ON) 3.4m Ultra Low On-resistance ID4 130A G RoHS Compliant & Halogen-Free D S D D Description D AP6N3R4C series are from Advanced Power innovated design and silicon process technology to

MOSTRAR MÁS

Otros transistores... AP6N3R5P , AP6N3R5LIN , AP6N3R5LI , AP6N3R5I , AP6N3R4CMT-L , AP6N3R4CMT , AP6N3R2P , AP6N3R1LH , IRF9640 , AP6N2R0P , AP6N2R0I , AP6N2R0CDT , AP6N1R7CDT , AP6N100JV , AP6N100J , AP6N100H , AP6N023H .

History: LNG5N50 | P0550ED | BSO220N03MSG

 

 

 

 

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