AP6N3R0LMT Datasheet and Replacement
Type Designator: AP6N3R0LMT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 32.3
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 62
nS
Cossⓘ -
Output Capacitance: 2900
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00299
Ohm
Package:
PMPAK5X6
-
MOSFET ⓘ Cross-Reference Search
AP6N3R0LMT Datasheet (PDF)
..1. Size:161K ape
ap6n3r0lmt.pdf 
AP6N3R0LMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60VD Simple Drive Requirement RDS(ON) 2.99m Lower On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP6N3R0L series are from Advanced Power innovated design andsilicon process technology to achieve the lowest pos
8.1. Size:183K ape
ap6n3r5i.pdf 
AP6N3R5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 72AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N3R5 seriesare fromAdvanced Power innovated design anda
8.2. Size:205K ape
ap6n3r8h.pdf 
AP6N3R8HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.8m Fast Switching Characteristic ID5 155AG RoHS Compliant & Halogen-FreeSDescriptionGAP6N3R8 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology to
8.3. Size:162K ape
ap6n3r4cmt.pdf 
AP6N3R4CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD SO-8 Compatible with Heatsink RDS(ON) 3.4m Ultra Low On-resistance ID4 130AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP6N3R4C series are from Advanced Power innovated design andsilicon process technology to
8.4. Size:335K ape
ap6n3r7mt.pdf 
AP6N3R7MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60VD Simple Drive Requirement RDS(ON) 3.7m Ultra Low On-resistance ID4 130A RoHS Compliant & Halogen-Free GDSDDDescriptionDAP6N3R7 series are from Advanced Power innovated design andsilicon process technology to achieve the l
8.5. Size:206K ape
ap6n3r2p.pdf 
AP6N3R2PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 3.2m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N3R2 seriesare fromAdvanced Power innovated design and
8.6. Size:168K ape
ap6n3r5p.pdf 
AP6N3R5PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 130AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N3R5 seriesare fromAdvanced Power innovated design and
8.7. Size:179K ape
ap6n3r5s.pdf 
AP6N3R5SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 130AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N3R5 seriesare fromAdvanced Power innovated design and
8.8. Size:183K ape
ap6n3r5li.pdf 
AP6N3R5LIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.5m Ultra Low On-resistance ID 75AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Powerinnovated designAP6N3R5L series are from AdvancedPower innovated desig
8.9. Size:320K ape
ap6n3r7mt-l.pdf 
AP6N3R7MT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60VD Simple Drive Requirement RDS(ON) 3.75m Ultra Low On-resistance RoHS Compliant & Halogen-Free GDSDDDescriptionDAP6N3R7 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest
8.10. Size:218K ape
ap6n3r5lin.pdf 
AP6N3R5LINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.5m Ultra Low On-resistance ID 75AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Powerinnovated designAP6N3R5L series are from AdvancedPower innovated desi
8.11. Size:318K ape
ap6n3r4cmt-l.pdf 
AP6N3R4CMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD SO-8 Compatible with Heatsink RDS(ON) 3.4m Ultra Low On-resistance ID4 130AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP6N3R4C series are from Advanced Power innovated design andsilicon process technology
8.12. Size:205K ape
ap6n3r1lh.pdf 
AP6N3R1LHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.1m Low On-resistance ID 100AGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 series are from Advanced Powerinnovated designAP6N3R1L series are from AdvancedPower innovated design
Datasheet: AP6N3R5P
, AP6N3R5LIN
, AP6N3R5LI
, AP6N3R5I
, AP6N3R4CMT-L
, AP6N3R4CMT
, AP6N3R2P
, AP6N3R1LH
, AON7403
, AP6N2R0P
, AP6N2R0I
, AP6N2R0CDT
, AP6N1R7CDT
, AP6N100JV
, AP6N100J
, AP6N100H
, AP6N023H
.
History: 2N90L-TN3-R
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