All MOSFET. AP6N3R0LMT Datasheet

 

AP6N3R0LMT Datasheet and Replacement


   Type Designator: AP6N3R0LMT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 32.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 117 nC
   trⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 2900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00299 Ohm
   Package: PMPAK5X6
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AP6N3R0LMT Datasheet (PDF)

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 ap6n3r0lmt.pdf pdf_icon

AP6N3R0LMT

AP6N3R0LMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60VD Simple Drive Requirement RDS(ON) 2.99m Lower On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP6N3R0L series are from Advanced Power innovated design andsilicon process technology to achieve the lowest pos

 8.1. Size:183K  ape
 ap6n3r5i.pdf pdf_icon

AP6N3R0LMT

AP6N3R5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 72AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N3R5 seriesare fromAdvanced Power innovated design anda

 8.2. Size:205K  ape
 ap6n3r8h.pdf pdf_icon

AP6N3R0LMT

AP6N3R8HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.8m Fast Switching Characteristic ID5 155AG RoHS Compliant & Halogen-FreeSDescriptionGAP6N3R8 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology to

 8.3. Size:162K  ape
 ap6n3r4cmt.pdf pdf_icon

AP6N3R0LMT

AP6N3R4CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD SO-8 Compatible with Heatsink RDS(ON) 3.4m Ultra Low On-resistance ID4 130AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP6N3R4C series are from Advanced Power innovated design andsilicon process technology to

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Keywords - AP6N3R0LMT MOSFET datasheet

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