AP6N2R0P Todos los transistores

 

AP6N2R0P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6N2R0P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 227 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 255 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 140 nS

Cossⓘ - Capacitancia de salida: 6150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm

Encapsulados: TO220

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AP6N2R0P datasheet

 ..1. Size:209K  ape
 ap6n2r0p.pdf pdf_icon

AP6N2R0P

AP6N2R0P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 2m Fast Switching Characteristic ID3 255A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N2R0 seriesare fromAdvanced Power innovated de

 7.1. Size:220K  ape
 ap6n2r0i.pdf pdf_icon

AP6N2R0P

AP6N2R0I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 2.1m Fast Switching Characteristic ID 110A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N2R0 seriesare fromAdvanced Power innovated d

 7.2. Size:137K  ape
 ap6n2r0cdt.pdf pdf_icon

AP6N2R0P

AP6N2R0CDT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D 100% Rg & UIS Test RDS(ON) 2m Ultra Low On-resistance ID4 205A G RoHS Compliant & Halogen-Free S Description PDFN 5x6 D D D D AP6N2R0C series are from Advanced Power innovated design and silicon process technology to achiev

 9.1. Size:141K  ape
 ap6n2k0en.pdf pdf_icon

AP6N2R0P

AP6N2K0EN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 2 Surface Mount Device ID3 450mA S RoHS Compliant & Halogen-Free SOT-23S G D Description AP6N2K0E series are from Advanced Power innovated design and silicon G process technology to achieve th

MOSTRAR MÁS

Otros transistores... AP6N3R5LIN , AP6N3R5LI , AP6N3R5I , AP6N3R4CMT-L , AP6N3R4CMT , AP6N3R2P , AP6N3R1LH , AP6N3R0LMT , IRFB7545 , AP6N2R0I , AP6N2R0CDT , AP6N1R7CDT , AP6N100JV , AP6N100J , AP6N100H , AP6N023H , AP6C036H .

 

 

 

 

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