AP6N2R0CDT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6N2R0CDT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 39 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 72 nS
Cossⓘ - Capacitancia de salida: 3600 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
Encapsulados: PDFN5X6
Búsqueda de reemplazo de AP6N2R0CDT MOSFET
- Selecciónⓘ de transistores por parámetros
AP6N2R0CDT datasheet
ap6n2r0cdt.pdf
AP6N2R0CDT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D 100% Rg & UIS Test RDS(ON) 2m Ultra Low On-resistance ID4 205A G RoHS Compliant & Halogen-Free S Description PDFN 5x6 D D D D AP6N2R0C series are from Advanced Power innovated design and silicon process technology to achiev
ap6n2r0i.pdf
AP6N2R0I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 2.1m Fast Switching Characteristic ID 110A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N2R0 seriesare fromAdvanced Power innovated d
ap6n2r0p.pdf
AP6N2R0P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 2m Fast Switching Characteristic ID3 255A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N2R0 seriesare fromAdvanced Power innovated de
ap6n2k0en.pdf
AP6N2K0EN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 2 Surface Mount Device ID3 450mA S RoHS Compliant & Halogen-Free SOT-23S G D Description AP6N2K0E series are from Advanced Power innovated design and silicon G process technology to achieve th
Otros transistores... AP6N3R5I , AP6N3R4CMT-L , AP6N3R4CMT , AP6N3R2P , AP6N3R1LH , AP6N3R0LMT , AP6N2R0P , AP6N2R0I , K2611 , AP6N1R7CDT , AP6N100JV , AP6N100J , AP6N100H , AP6N023H , AP6C036H , AP6982GN2 , AP6980GN2 .
History: BSS123D87Z
History: BSS123D87Z
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Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
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