AP6N023H Todos los transistores

 

AP6N023H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6N023H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm

Encapsulados: TO252

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AP6N023H datasheet

 ..1. Size:241K  ape
ap6n023h.pdf pdf_icon

AP6N023H

AP6N023H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 23m Fast Switching Characteristic ID 25.4A G G RoHS Compliant & Halogen-Free S S Description G AP4604 seriesare from Advanced Power innovated design AP6N023series arefrom Advanced Power innovated

 8.1. Size:220K  ape
ap6n021m.pdf pdf_icon

AP6N023H

AP6N021M Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60V D D Simple Drive Requirement D RDS(ON) 21m D Fast Switching Characteristic ID3 7.8A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP6N021 series are from Advanced Power innovated design and silicon process technology to

 9.1. Size:178K  ape
ap6n090k.pdf pdf_icon

AP6N023H

AP6N090K Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Lower Gate Charge RDS(ON) 90m S Fast Switching Characteristic ID3 4.1A D RoHS Compliant & Halogen-Free SOT-223 G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve

 9.2. Size:171K  ape
ap6n090g.pdf pdf_icon

AP6N023H

AP6N090G Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7A S RoHS Compliant & Halogen-Free D SOT-89 G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve the

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