AP6N023H - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP6N023H
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 31.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 25.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 100 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
Тип корпуса: TO252
Аналог (замена) для AP6N023H
AP6N023H Datasheet (PDF)
ap6n023h.pdf

AP6N023HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 23m Fast Switching Characteristic ID 25.4AGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 seriesare from Advanced Power innovated designAP6N023series arefrom Advanced Power innovated
ap6n021m.pdf

AP6N021MHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60VDD Simple Drive Requirement D RDS(ON) 21mD Fast Switching Characteristic ID3 7.8AGS RoHS Compliant & Halogen-FreeSSSO-8Description DAP6N021 series are from Advanced Power innovated design andsilicon process technology to
ap6n090k.pdf

AP6N090KHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 90mS Fast Switching Characteristic ID3 4.1AD RoHS Compliant & Halogen-FreeSOT-223GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve
ap6n090g.pdf

AP6N090GHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7AS RoHS Compliant & Halogen-FreeDSOT-89GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve the
Другие MOSFET... AP6N3R0LMT , AP6N2R0P , AP6N2R0I , AP6N2R0CDT , AP6N1R7CDT , AP6N100JV , AP6N100J , AP6N100H , BS170 , AP6C036H , AP6982GN2 , AP6980GN2 , AP6942GMT , AP6926GMT , AP6923GMT , AP6679BGP , AP65WN770P .
History: SI5904DC | AFN9530 | TPCF8101 | SSM6N25TU
History: SI5904DC | AFN9530 | TPCF8101 | SSM6N25TU



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