AP6982GN2 Todos los transistores

 

AP6982GN2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6982GN2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm

Encapsulados: DFN2X2

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AP6982GN2 datasheet

 ..1. Size:647K  ape
 ap6982gn2.pdf pdf_icon

AP6982GN2

AP6982GN2-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive D BVDSS 20V Small Size & Lower Profile RDS(ON) 12.5m Halogen Free & RoHS Compliant Product ID 11A G S Top view D D D S Description D S AP6982 series are from Advanced Power innovated design and silicon process technology to achieve

 0.1. Size:96K  ape
 ap6982gn2-hf.pdf pdf_icon

AP6982GN2

AP6982GN2-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive D BVDSS 20V Small Size & Lower Profile RDS(ON) 12.5m Halogen Free & RoHS Compliant Product ID 11A G S Top view D D D S Description D S AP6982 series are from Advanced Power innovated design and silicon process technology to achieve

 7.1. Size:85K  ape
 ap6982gm-hf.pdf pdf_icon

AP6982GN2

AP6982GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance CH-1 BVDSS 30V D2 D2 Fast Switching Characteristic RDS(ON) 18m D1 D1 Surface Mount Package ID 8.5A G2 S2 RoHS Compliant & Halogen-Free CH-2 BVDSS 30V G1 S1 SO-8 RDS(ON) 26m Description ID 7.3A Advanced Power MOSFETs from APEC pr

 7.2. Size:99K  ape
 ap6982gm.pdf pdf_icon

AP6982GN2

AP6982GM Pb Free Plating Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance CH-1 BVDSS 30V D2 D2 D2 D2 Fast Switching Characteristic RDS(ON) 18m D1 D1 D1 D1 Surface Mount Package ID 8.5A G2 G2 CH-2 BVDSS 30V S2 S2 G1 SO-8 G1 S1 RDS(ON) 26m SO-8 S1 Descript

MOSTRAR MÁS

Otros transistores... AP6N2R0I , AP6N2R0CDT , AP6N1R7CDT , AP6N100JV , AP6N100J , AP6N100H , AP6N023H , AP6C036H , IRFP064N , AP6980GN2 , AP6942GMT , AP6926GMT , AP6923GMT , AP6679BGP , AP65WN770P , AP65WN770IN , AP65WN770I .

History: BUK9Y113-100E | HM2302BWSR | HM4822

 

 

 

 

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