AP6980GN2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6980GN2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 9.5 nC
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 130 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Paquete / Cubierta: DFN2X2
Búsqueda de reemplazo de MOSFET AP6980GN2
AP6980GN2 Datasheet (PDF)
ap6980gn2.pdf
AP6980GN2-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Small Size & Lower Profile RDS(ON) 14m Halogen Free & RoHS Compliant Product ID 10.3AGSTop viewDD D SDescriptionDSAP6980 series are from Advanced Power innovated desig
ap6980gn2-hf.pdf
AP6980GN2-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Small Size & Lower Profile RDS(ON) 14m Halogen Free & RoHS Compliant Product ID 10.3AGSTop viewDD D SDescriptionDSAP6980 series are from Advanced Power innovated design andsilicon process technology to achieve th
ap6985gn2-hf.pdf
AP6985GN2-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive D BVDSS -20V Small Size & Lower Profile RDS(ON) 26m Halogen Free & RoHS Compliant Product ID -8AGSTop viewDD D SDescriptionDSAP6985 series are from Advanced Power innovated desi
ap6982gn2.pdf
AP6982GN2-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive D BVDSS 20V Small Size & Lower Profile RDS(ON) 12.5m Halogen Free & RoHS Compliant Product ID 11AGSTop viewDD D SDescriptionDSAP6982 series are from Advanced Power innovated design andsilicon process technology to achieve
ap6982gm-hf.pdf
AP6982GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance CH-1 BVDSS 30VD2D2 Fast Switching Characteristic RDS(ON) 18mD1D1 Surface Mount Package ID 8.5AG2S2 RoHS Compliant & Halogen-Free CH-2 BVDSS 30VG1S1SO-8RDS(ON) 26mDescription ID 7.3AAdvanced Power MOSFETs from APEC pr
ap6982gn2-hf.pdf
AP6982GN2-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive D BVDSS 20V Small Size & Lower Profile RDS(ON) 12.5m Halogen Free & RoHS Compliant Product ID 11AGSTop viewDD D SDescriptionDSAP6982 series are from Advanced Power innovated design andsilicon process technology to achieve
ap6982gm.pdf
AP6982GMPb Free Plating ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance CH-1 BVDSS 30VD2D2D2D2 Fast Switching Characteristic RDS(ON) 18mD1D1D1D1 Surface Mount Package ID 8.5AG2G2CH-2 BVDSS 30VS2S2G1SO-8G1S1RDS(ON) 26mSO-8 S1Descript
ap6983gn2-hf.pdf
AP6983GN2-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.5V Gate Drive D BVDSS -20V Small Size & Lower Profile RDS(ON) 32m Halogen Free & RoHS Compliant Product ID -7.1AGSTop viewDD D SDescriptionDSAP6983 series are from Advanced Power innovated design andsilicon process technology to achieve
Otros transistores... AP6N2R0CDT , AP6N1R7CDT , AP6N100JV , AP6N100J , AP6N100H , AP6N023H , AP6C036H , AP6982GN2 , IRF830 , AP6942GMT , AP6926GMT , AP6923GMT , AP6679BGP , AP65WN770P , AP65WN770IN , AP65WN770I , AP65WN470I .
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