AP6980GN2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP6980GN2
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.4 W
Предельно допустимое напряжение сток-исток (Uds): 30 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Пороговое напряжение включения Ugs(th): 3 V
Максимально допустимый постоянный ток стока (Id): 10.3 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 5 ns
Выходная емкость (Cd): 130 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.014 Ohm
Тип корпуса: DFN2X2
AP6980GN2 Datasheet (PDF)
1.1. ap6980gn2-hf.pdf 
Size:99K _a-power
AP6980GN2-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 30V Ў Small Size & Lower Profile RDS(ON) 14m? Ў Halogen Free & RoHS Compliant Product ID 10.3A G S Top view D D D S Description D S AP6980 series are from Advanced Power innovated design and silicon process technology to achieve the lowes
1.2. ap6980gn2.pdf Size:602K _a-power
AP6980GN2-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 30V ▼ ▼ ▼ ▼ Small Size & Lower Profile RDS(ON) 14mΩ ▼ ▼ ▼ ▼ Halogen Free & RoHS Compliant Product ID 10.3A ▼ ▼ ▼ G S Top view D D D S Description D S AP6980 series are from Advanced Power innovated desig
5.1. ap6985gn2-hf.pdf Size:51K _a-power
AP6985GN2-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Capable of 1.8V Gate Drive D BVDSS -20V ▼ ▼ ▼ ▼ Small Size & Lower Profile RDS(ON) 26mΩ ▼ ▼ ▼ ▼ Halogen Free & RoHS Compliant Product ID -8A ▼ ▼ ▼ G S Top view D D D S Description D S AP6985 series are from Advanced Power innovated desi
5.2. ap6982gn2-hf.pdf Size:96K _a-power
AP6982GN2-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Capable of 1.8V Gate Drive D BVDSS 20V Ў Small Size & Lower Profile RDS(ON) 12.5m? Ў Halogen Free & RoHS Compliant Product ID 11A G S Top view D D D S Description D S AP6982 series are from Advanced Power innovated design and silicon process technology to achieve the low
5.3. ap6982gm.pdf Size:99K _a-power
AP6982GM Pb Free Plating Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Low On-resistance CH-1 BVDSS 30V Ў Ў Ў D2 D2 D2 D2 Ў Fast Switching Characteristic RDS(ON) 18m? Ў Ў Ў D1 D1 D1 D1 Ў Surface Mount Package ID 8.5A Ў Ў Ў G2 G2 CH-2 BVDSS 30V S2 S2 G1 SO-8 G1 S1 RDS(ON) 26m? SO-8 S1 Description ID 7.3A The
5.4. ap6982gn2.pdf Size:647K _a-power
AP6982GN2-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Capable of 1.8V Gate Drive D BVDSS 20V ▼ Small Size & Lower Profile RDS(ON) 12.5mΩ ▼ Halogen Free & RoHS Compliant Product ID 11A G S Top view D D D S Description D S AP6982 series are from Advanced Power innovated design and silicon process technology to achieve
5.5. ap6983gn2-hf.pdf Size:95K _a-power
AP6983GN2-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Capable of 1.5V Gate Drive D BVDSS -20V Ў Small Size & Lower Profile RDS(ON) 32m? Ў Halogen Free & RoHS Compliant Product ID -7.1A G S Top view D D D S Description D S AP6983 series are from Advanced Power innovated design and silicon process technology to achieve the lo
5.6. ap6982gm-hf.pdf Size:85K _a-power
AP6982GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Low On-resistance CH-1 BVDSS 30V D2 D2 ▼ Fast Switching Characteristic RDS(ON) 18mΩ D1 D1 ▼ Surface Mount Package ID 8.5A G2 S2 ▼ RoHS Compliant & Halogen-Free CH-2 BVDSS 30V G1 S1 SO-8 RDS(ON) 26mΩ Description ID 7.3A Advanced Power MOSFETs from APEC pr
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