AP6942GMT Todos los transistores

 

AP6942GMT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6942GMT

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.57 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: PMPAK5X6

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AP6942GMT datasheet

 ..1. Size:161K  ape
 ap6942gmt.pdf pdf_icon

AP6942GMT

AP6942GMT-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1 D1 D2 D2 Simple Drive Requirement N-CH BVDSS 30V Good Thermal Performance RDS(ON) 9m Fast Switching Performance ID 15.8A RoHS Compliant & Halogen-Free P-CH BVDSS -20V RDS(ON) 23m S1 G1 S2 G

 0.1. Size:128K  ape
 ap6942gmt-hf.pdf pdf_icon

AP6942GMT

AP6942GMT-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1 D1 D2 D2 Simple Drive Requirement N-CH BVDSS 30V Good Thermal Performance RDS(ON) 9m Fast Switching Performance ID 15.8A RoHS Compliant & Halogen-Free P-CH BVDSS -20V RDS(ON) 23m S1 G1 S2 G2 Description ID -10.1A AP6942 series are from Advanced Powe

 9.1. Size:87K  ape
 ap6941gmt-hf.pdf pdf_icon

AP6942GMT

AP6941GMT-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1 D1 D2 D2 Simple Drive Requirement N-CH BVDSS 20V Good Thermal Performance RDS(ON) 16m Fast Switching Performance ID 12A RoHS Compliant & Halogen-Free P-CH BVDSS -20V RDS(ON) 32m S1 G1 S2 G2 Description ID -8.8A AP6941 series are from Advanced Power

 9.2. Size:1596K  cn apm
 ap6946a.pdf pdf_icon

AP6942GMT

AP6946A 60V N+N-Channel Enhancement Mode MOSFET Description The AP6946A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =7.2A DS D R

MOSTRAR MÁS

Otros transistores... AP6N1R7CDT , AP6N100JV , AP6N100J , AP6N100H , AP6N023H , AP6C036H , AP6982GN2 , AP6980GN2 , IRF730 , AP6926GMT , AP6923GMT , AP6679BGP , AP65WN770P , AP65WN770IN , AP65WN770I , AP65WN470I , AP65WN2K3L .

History: HM2302E | AP6C036H

 

 

 

 

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