AP6926GMT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6926GMT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.13 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 7.2 nC
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 65 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: PMPAK5X6
Búsqueda de reemplazo de MOSFET AP6926GMT
AP6926GMT Datasheet (PDF)
ap6926gmt.pdf
AP6926GMT-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1 Simple Drive Requirement CH-1 BVDSS 40V Easy for Synchronous Buck RDS(ON) 40mG1Converter Application ID 15AD2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 40VRDS(ON) 20mG2Description ID 24AS2Advanced Power MOSFETs from APEC provideG2G2 S2 S
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ap6922gmt-hf.pdf
AP6922GMT-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL MOSFET WITHElectronics Corp. SCHOTTKY DIODED1 Simple Drive Requirement CH-1 BVDSS 30V Easy for Synchronous Buck RDS(ON) 8.5mG1Converter Application ID 48AD2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 30VRDS(ON) 3.8mG2Description ID 87AS2Advanced Power MOSFETs from APEC provideG2G2 S2 S2
ap6924gey.pdf
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ap6923gmt.pdf
AP6923GMT-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL MOSFET WITHElectronics Corp. SCHOTTKY DIODED1 Simple Drive Requirement CH-1 BVDSS 30V Easy for Synchronous Buck RDS(ON) 11mG1Converter Application ID 32AD2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 30VRDS(ON) 7mG2Description ID 47AS2Advanced Power MOSFETs from APEC provideG2G2 S2 S2 S2
ap6921gmt-hf.pdf
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ap6920gmt-hf.pdf
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ap6923gmt-hf.pdf
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ap6928gmt-hf.pdf
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