AP6926GMT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6926GMT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.13 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 65 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: PMPAK5X6
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AP6926GMT Datasheet (PDF)
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Otros transistores... AP6N100JV , AP6N100J , AP6N100H , AP6N023H , AP6C036H , AP6982GN2 , AP6980GN2 , AP6942GMT , IRFZ44N , AP6923GMT , AP6679BGP , AP65WN770P , AP65WN770IN , AP65WN770I , AP65WN470I , AP65WN2K3L , AP65WN2K3I .
History: VS3640DE | SSF2316E



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