AP6926GMT Todos los transistores

 

AP6926GMT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6926GMT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.13 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: PMPAK5X6

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AP6926GMT datasheet

 ..1. Size:207K  ape
 ap6926gmt.pdf pdf_icon

AP6926GMT

AP6926GMT-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1 Simple Drive Requirement CH-1 BVDSS 40V Easy for Synchronous Buck RDS(ON) 40m G1 Converter Application ID 15A D2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 40V RDS(ON) 20m G2 Description ID 24A S2 Advanced Power MOSFETs from APEC provide G2 G2 S2 S

 9.1. Size:160K  ape
 ap6925gy.pdf pdf_icon

AP6926GMT

AP6925GY RoHS-compliant Product Advanced Power P-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE D Low Gate Charge BVDSS -16V NC K Surface Mount Package RDS(ON) 150m G RoHS Compliant ID - 1.6A S SOT-26 A A D Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, ruggedized device design, ultra lower

 9.2. Size:130K  ape
 ap6922gmt-hf.pdf pdf_icon

AP6926GMT

AP6922GMT-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE D1 Simple Drive Requirement CH-1 BVDSS 30V Easy for Synchronous Buck RDS(ON) 8.5m G1 Converter Application ID 48A D2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 30V RDS(ON) 3.8m G2 Description ID 87A S2 Advanced Power MOSFETs from APEC provide G2 G2 S2 S2

 9.3. Size:60K  ape
 ap6924gey.pdf pdf_icon

AP6926GMT

AP6924GEY RoHS-compliant Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE K Low On-Resistance BVDSS 20V S D Fast Switching Characteristic RDS(ON) 600m Included Schottky Diode ID 1A A A SOT-26 G Description The Advanced Power MOSFETs from APEC provide the D K designer with the best combination of fast switching, ruggedized device desi

MOSTRAR MÁS

Otros transistores... AP6N100JV , AP6N100J , AP6N100H , AP6N023H , AP6C036H , AP6982GN2 , AP6980GN2 , AP6942GMT , IRFZ44N , AP6923GMT , AP6679BGP , AP65WN770P , AP65WN770IN , AP65WN770I , AP65WN470I , AP65WN2K3L , AP65WN2K3I .

History: KP742A | HM2302B | SSD40N10-30D

 

 

 

 

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