AP6926GMT MOSFET Datasheet: N-Ch, 40V, 6.7A. Full specification with pinout and replacement list

AP6926GMT Specs and Replacement

Type Designator: AP6926GMT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.13 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: PMPAK5X6

AP6926GMT substitution

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AP6926GMT datasheet

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AP6926GMT-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1 Simple Drive Requirement CH-1 BVDSS 40V Easy for Synchronous Buck RDS(ON) 40m G1 Converter Application ID 15A D2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 40V RDS(ON) 20m G2 Description ID 24A S2 Advanced Power MOSFETs from APEC provide G2 G2 S2 S... See More ⇒

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ap6925gy.pdf pdf_icon

AP6925GY RoHS-compliant Product Advanced Power P-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE D Low Gate Charge BVDSS -16V NC K Surface Mount Package RDS(ON) 150m G RoHS Compliant ID - 1.6A S SOT-26 A A D Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, ruggedized device design, ultra lower ... See More ⇒

9.2. Size:130K ape
ap6922gmt-hf.pdf pdf_icon

AP6922GMT-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE D1 Simple Drive Requirement CH-1 BVDSS 30V Easy for Synchronous Buck RDS(ON) 8.5m G1 Converter Application ID 48A D2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 30V RDS(ON) 3.8m G2 Description ID 87A S2 Advanced Power MOSFETs from APEC provide G2 G2 S2 S2... See More ⇒

9.3. Size:60K ape
ap6924gey.pdf pdf_icon

AP6924GEY RoHS-compliant Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE K Low On-Resistance BVDSS 20V S D Fast Switching Characteristic RDS(ON) 600m Included Schottky Diode ID 1A A A SOT-26 G Description The Advanced Power MOSFETs from APEC provide the D K designer with the best combination of fast switching, ruggedized device desi... See More ⇒