AP6923GMT Todos los transistores

 

AP6923GMT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP6923GMT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.13 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.5 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: PMPAK5X6
     - Selección de transistores por parámetros

 

AP6923GMT Datasheet (PDF)

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ap6923gmt.pdf pdf_icon

AP6923GMT

AP6923GMT-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL MOSFET WITHElectronics Corp. SCHOTTKY DIODED1 Simple Drive Requirement CH-1 BVDSS 30V Easy for Synchronous Buck RDS(ON) 11mG1Converter Application ID 32AD2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 30VRDS(ON) 7mG2Description ID 47AS2Advanced Power MOSFETs from APEC provideG2G2 S2 S2 S2

 0.1. Size:130K  ape
ap6923gmt-hf.pdf pdf_icon

AP6923GMT

AP6923GMT-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL MOSFET WITHElectronics Corp. SCHOTTKY DIODED1 Simple Drive Requirement CH-1 BVDSS 30V Easy for Synchronous Buck RDS(ON) 11mG1Converter Application ID 32AD2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 30VRDS(ON) 7mG2Description ID 47AS2Advanced Power MOSFETs from APEC provideG2G2 S2 S2 S2

 8.1. Size:72K  ape
ap6923o.pdf pdf_icon

AP6923GMT

AP6923OAdvanced Power P-CHANNEL WITH SCHOTTKY DIODEElectronics Corp. POWER MOSFET Low On-Resistance A BVDSS -20VAAK Fast Switching Characteristic RDS(ON) 50mGS Included Schottky Diode ID -3.5ASTSSOP-8DDescriptionDAThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast

 9.1. Size:207K  ape
ap6926gmt.pdf pdf_icon

AP6923GMT

AP6926GMT-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1 Simple Drive Requirement CH-1 BVDSS 40V Easy for Synchronous Buck RDS(ON) 40mG1Converter Application ID 15AD2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 40VRDS(ON) 20mG2Description ID 24AS2Advanced Power MOSFETs from APEC provideG2G2 S2 S

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NVMFS5C456NL | 2SK3638 | DMN4010LFG | HUF76105SK8 | NP88N04DHE | 2N06L07B | IPD60R360CFD7

 

 
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