AP65WN770IN Todos los transistores

 

AP65WN770IN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP65WN770IN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.77 Ohm

Encapsulados: TO220F-NL

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AP65WN770IN datasheet

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ap65wn770in.pdf pdf_icon

AP65WN770IN

AP65WN770IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP65WN770 series are from the innovated design and silicon process technology to achieve the lowest possible on

 4.1. Size:175K  ape
ap65wn770i.pdf pdf_icon

AP65WN770IN

AP65WN770I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP65WN770 series are from the innovated design and silicon process technology to achieve the lowest possible on-

 5.1. Size:159K  ape
ap65wn770p.pdf pdf_icon

AP65WN770IN

AP65WN770P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP65WN770 series are from the innovated design and silicon process technology to achieve the lowest possible on-

 8.1. Size:213K  ape
ap65wn2k3i.pdf pdf_icon

AP65WN770IN

AP65WN2K3I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.29 Simple Drive Requirement ID3 4A G RoHS Compliant & Halogen-Free S Description AP65WN2K3 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

Otros transistores... AP6C036H , AP6982GN2 , AP6980GN2 , AP6942GMT , AP6926GMT , AP6923GMT , AP6679BGP , AP65WN770P , 20N60 , AP65WN770I , AP65WN470I , AP65WN2K3L , AP65WN2K3I , AP65WN2K3H , AP65WN1K5S , AP65WN1K5I , AP65WN1K0I .

History: LSG65R950HT | AS3442

 

 

 


History: LSG65R950HT | AS3442

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