AP65WN770IN - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP65WN770IN
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 39 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 36 ns
Cossⓘ - Выходная емкость: 80 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.77 Ohm
Тип корпуса: TO220F-NL
Аналог (замена) для AP65WN770IN
AP65WN770IN Datasheet (PDF)
ap65wn770in.pdf

AP65WN770INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN770 series are from the innovated design and siliconprocess technology to achieve the lowest possible on
ap65wn770i.pdf

AP65WN770IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN770 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-
ap65wn770p.pdf

AP65WN770PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN770 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-
ap65wn2k3i.pdf

AP65WN2K3IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.29 Simple Drive Requirement ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN2K3 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe
Другие MOSFET... AP6C036H , AP6982GN2 , AP6980GN2 , AP6942GMT , AP6926GMT , AP6923GMT , AP6679BGP , AP65WN770P , IRF840 , AP65WN770I , AP65WN470I , AP65WN2K3L , AP65WN2K3I , AP65WN2K3H , AP65WN1K5S , AP65WN1K5I , AP65WN1K0I .
History: RJK2009DPM | SWI830D1 | SWI8N65D
History: RJK2009DPM | SWI830D1 | SWI8N65D



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